SD1650 STMICROELECTRONICS | Alldatasheet

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CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS .400 6LFL (M169) epoxy sealed .REFRACTORY/GOLD METALLIZATION .DOUBLE STEP INPUT/OUTPUT MATCH .850-960 MHz CLASS AB LINEAR .COMMON EMITTER .P OUT = 60 W MIN. WITH 7 dB MIN GAIN

DESCRIPTION

Designed for 900 MHz cellular radio base station applications, the SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double-section internal input/output matching re- sult in terminal impedance levels easily handled by the circuit designer. PIN CONNECTION BRANDING SCELL500 ORDER CODE SD1650 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 28 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 10 A PDISS Power Dissipation (+25°C) 175 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 1.5 °C/W *Applies only to rated RF amplifier operation SD1650 1. Collector 3. Emitter 2. Base THERMAL DATA August 1992 1/5

ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT f= 900 MHz P IN = 12 W I CQ = 300 mA 60 — — W ηcf = 900 MHz P IN = 12 W I CQ = 300 mA 45 — — % G P f= 900 MHz P IN = 12 W I CQ = 300 mA 7 — — dB VSWR f = 900 MHz P IN = 12 W 3:1 — — — STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 50mA 60 — — V BV EBO IE = 20mA 3.0 — — V BV CES IC = 100mA 60 — — V BV CEO IC = 100mA 28 — — V ICEO VCE = 24V — — 10 mA hFE VCE = 5V I C = 6A 20 — 200 — DYNAMIC SD1650

0123456789 1 0 1 1 1 2 1 3 vs POWER INPUT P O W E R O U T P U T W A T T S POWER INPUT (WATTS)POWER INPUT (WATTS) BROADBAND POWER OUTPUT vs POWER INPUT

900 MHz

850 MHz

960 MHz

7.5 8.5 9.5 825 850 875 900 925 950 975 1000 vs FREQUENCY P O W E R G A I N d B FREQUENCY (MHz)FREQUENCY (MHz) BROADBAND POWER GAIN vs FREQUENCY POUT = 60 Watts ICQ = 300 mA 100 825 850 875 900 925 950 975 1000 vs FREQUENCY P O W E R O U T P U T W A T T S FREQUENCY (MHz)FREQUENCY (MHz) BROADBAND POWER OUTPUT vs FREQUENCY PIN = 12 Watts ICQ = 300 mA 825 850 875 900 925 950 975 1000 vs FREQUENCY E F F I C I E N C Y FREQUENCY (MHz)FREQUENCY (MHz) BROADBAND EFFICIENCY vs FREQUENCY POUT = 60 Watts ICQ = 300 mA SD1650

C1,C2 : 220 pF Chip Capacitor ATC Size B C3 : 10 Microfarad Electrolytic Capacitor C4,C5 : 220 pF Chip Capacitor ATC Size B C6,C7 : 1 - 4 pF Johanson Variable Capacitor D1,D2 : 1N3064 Diode or Equiv L1,L2 : 5 Turn 1/4” Dia. 16 AWG Coil Q1 : SD1438-02 or Equiv. R1 : 5K Ω Potentiometer R2 : 100 Ω 1/4 Watt Resistor Er =10.2 H=.025in. TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE IMPEDANCE DATA ZIN ZCL FREQ. Z IN (Ω )Z CL (Ω ) 850 MHz 2.4 + j 5.2 4.0 − j1 . 3 870 MHz 2.6 + j 5.4 3.9 − j2 . 3 900 MHz 3.2 + j 6.3 3.6 − j2 . 6 930 MHz 4.1 + j 6.0 3.4 − j2 . 4 960 MHz 4.7 + j 5.6 3.0 − j3 . 0 SD1650

Ref. Dwg. No.: 12-0169 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics.  1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD1650