SC5387

2SC5387 TOSHIBA | Alldatasheet

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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS peSEO5-, 036203 430203 SI ae yf | exe ma 8 43 | 4] @ High Voltage : Vopo = 1500V aa alo alg 3 e@ Low Saturation Voltage : VCE (sat) = 3 V (Max.) * |S . he neo? e High Speed : tg = 0.15 ws (Typ.) 4.0 M Ps 23amaxl Il alg © Collector Metal (Fin) is Fully Covered with Mold Resin. “=r 3 5.85 5.45 MAXIMUM RATINGS (Ta = 25°C) . ol CHARACTERISTIC SYMBOL UNIT ai Fi of 1 2 3 | Collector-Base Voltage VCBO 1500 Fa Collector-Emitter Voltage Vcco [| 600 | V | ef 1 1. BASE Emitter-Base Voltage = ZEBO 5 Vv 3. EMITTER [pe fw Tt Collector Current [Pulse [Top [20 |_| JEDEC = ean Nal Dissipation TOSHIBA 2-16E3A a Weight : 5.5 g (Typ.) Junction Temperature Storage Temperature Range —55~150 96100144 @ TOSHIBA js continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent’ products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-07-20 1/5

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current IcBoO Vcp = 1500 V, Ip =0 | — | — | 1[ mA] Emitter Cutoff Current | Ippo [Vp = 5V, Te = 0 D— p= | io] pa Emitter-Base Breakdown a sneriomin-e | ow[ —|—[= | DC Current Gain BRE (2 Ver =5V, Ic =8A [43f— |_78| Collector-Emitter Saturation _ _ vermaficreniersn [= [=| fs Base-Emitter Saturation Fe ealersnnman [| el w Transition Frequency VcE = 10V, Ic =0.1A [| — | 17{ — | Mm: | Collector Output Capacitance Vos = 10V, Ip =0,f=1MHz | — | 130] — | pF | Switching Iop = 6A, Ipi(end)=12A =| — | 25] 3.5] Time Fall Time fgg = 64 it [=fors[ os] “ 1999-07-20 2/5

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