SC5094 DCCOM | Alldatasheet

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Technical content

DC COMPONENTS CO., LTD. TECHNICAL SPECIFICA TIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for low noise amplifier at VHF, UHF and CATV band. Pinning 1 = Base 2 = Emitter 3 = Collector .091(2.30) .067(1.70) SOT-23 Dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) Max .027(0.67) .013(0.32) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 18 V Collector-Emitter Voltage VCEO 10 V Emitter-Base Voltage VEBO 2.5 V Collector Current IC 20 mA Total Power Dissipation PD 150 mW Junction Temperature TJ +125 oC Storage Temperature TSTG -50 to +125 oC Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Min Typ Max Unit Test Conditions Collector Cutoff Current ICBO - - 1 µA VCB=3V Emitter Cutoff Current IEBO - - 1 µA VEB=1V DC Current Gain(1) hFE 50 80 160 - IC=1mA, VCE=2V Transition Frequency fT - 7.6 - GHz IC=10mA, VCE=1V - 9 - GHz IC=12mA, VCE=3V Minimum Noise Figure NFmin - 1.4 - dB IC=4.2mA, VCE=2V, f=0.9GHz - 1.6 - dB IC=4.5mA, VCE=5V, f=0.9GHz Associated Gain GA - 12 - dB IC=4.2mA, VCE=2V, f=0.9GHz - 13.5 - dB IC=4.5mA, VCE=5V, f=0.9GHz Insertion Gain S21 2 in 50Ω system S21 2 - 12.8 - dB IC=4.2mA, VCE=2V, f=0.9GHz - 13.5 - dB IC=4.5mA, VCE=5V, f=0.9GHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%