SC260 MOTOROLA | Alldatasheet
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MOTOROLA SC {DIODES/OPTO+ Ob DEP eae7255 oozvse3q o T
6367255 MOTOROLA SC (DIODES/OPTO) OQ1E 79239 DT ASIS™
Triacs SC260( )3 Bidirectional Triode Thyristors $C261 . +. designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power switching systems; or wherever TRIACS full-wave, silicon gate controlled solid-state devices are needed. Ree Os © All Diffused and Glass Passivated Junctions for Greater Stability m © Pressfit, Stud and Isolated Stud Packages | © Gate Triggering Guaranteed In All 3 Quadrants | 0 ff owns a MAXIMUM RATINGS Repetitive Peak Off-State Voltage VoRM. Volts | (To = —40°C to +115°C) _S SC260B, SC260B3, SC261B 200 < $C260D, SC260D3, SC261D 400 | ‘SC260M, SC260M3, SC261M 600 CASE 263-04 | [vs ors canen rs] 28 | an | omnes Peak Non-Repetitive Surge Current ITSM ‘Amps | (One Cycle, 60 Hz) - j Cireuit Fusing Considerations 180 (oS | t=1ms Rf t= 83 ms 260 LG | Fook Gate Power (Pulse Width = 70 pat [row [10 | won | Ry casera | Average Gaterower [Patan | 08 | Wat | sc26t : THERMAL CHARACTERISTICS G STYLE2 [ewes [yi [un] sez Thermal Resistance, Junction to Case “cw $0260, $C261 18 ‘SC260( )3 1.95 | : MOTOROLA THYRISTOR DEVICE DATA 3-314 : ee
MOTOROLA SC {DIODES/OPTO} © On DeBese7255 oovaua 7 Prose “pUZ60 @ SC260( 3 @ SC261 ELECTRICAL CHARACTERISTICS (Tc = +25°C unless otherwise noted. Values apply for either polarity of Main Terminal 2 Characteristics referenced to Main Terminal 1.) : [characterise OT Svmbot sin | typ | Mex [Unit | Peak Forward or Reverse Blocking Current IpRM. ‘RRM (Rated VorM or VRRM, gate open) re = eC wA cnt m Peak On-State Voltage V™ Volts (itm = 35 A Peak, Pulse Width = 1 ms, Duty Cycle < 2%) Critical Rate of Rise of Off-State Voltage dv/dt Vips (Rated VpRM, Gate Open-Circuited, Exponential Waveform) To = +118°C Critical Rate-of-Rise of Commutating Off-State Voltage dvidt(c) Vins (trams) = Rated RMS On-State Current) (VpRM = Reted Peak Off-State Voltage, . Gate Open-Circuited, Commutating di/dt = 13.5 Aims) Tc = +80°C | DC Gate Trigger Current (Continuous dc) let (Wp = 12 Vdo) MT2(+), G(+); MT2(—), G(—); RL = 100 Ohms MT2(+), G(—); RL = 50 Ohms . D« Gate Trigger Current (Continuous de) 1 we ler i p= 12 Vee oo i MT2(+), Gi+); MT2(—), G(—); RL = 50 Ohms 80 t | MT2(+), G(—); RL = 25 Ohms 80 | DC Gate Trigger Voltage (Continuous de) (Vp = 12 Vde) Vor Vde } MT2(+), G(+); MT2(—), G(—); RL = 100 Ohms 25 ! MT2(+), G(—); RL = 50 Ohms 25 j DC Gate Trigger Voltage (Continuous dc) Ver Vde (Vp = 12 Vdo) Te = -40°C MT2(+), G(+); MT2(—), G(—); RL = 50 Ohms 35 MT2(+), G(—); RL = 25 Ohms 3.5 DC Gate Non-Trigger Voltage Veo (Vp = Rated VorM, RL = 1K Ohms, Te = 118°C All Trigger Modes) Holding Current (Vp = 24 Vde, Peak Initiating Current = 0.5 A, t Pulse Width = 0.1 to 10 ms, Gate Trigger Source = 7 V, 20 Ohms) To = +25°C ; “Te = —40°C i Latching Current IL ! (Vp = 24 Vde, Gate Trigger Source = 16 V, 100 Ohms, . f Pulse Width = 50 us, 5 ws Maximum Rise and Fall Times) FIGURE 1 — CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION a a a a 2; TE NOTLL, a a a eCCe SN BEER i Se ern ee a A a | oA PEER | eee Nee PEER A Ra Br ELE] SK] ye a oe ao En —~ Fs a ee > oe LT TT | | INN EF ae lO
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i PLT TTT Tir in 2 dzerrrr errr i b * eS 99 8 b $ 1 7s j & ‘rymas), RMS ON STATE CURRENT (AMP) ‘runms), AMS ONSTATE CURRENT (AMP | MOTOROLA THYRISTOR DEVICE DATA 3-315