SC250 MOTOROLA | Alldatasheet
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MOTOROLA SC {DIODES/OPTO} ~ on pePese7ess oovq3a7 27 Prasis | Triacs i Bidirectional Triode Thyristors i . .. designed primarily for industrial and military applications for the control of | ac loads in applications such as light dimmers, power supplies, heating controls, TRIACS | motor controls, welding equipment and power switching systems; or wherever 15 AMPERES RMS. full-wave, silicon gate controlled solid-state devices are needed. 200 thru 600 VOLTS © All Diffused and Glass Passivated Junctions for Greater Stability © Pressfit, Stud and Isolated Stud Packages © Gate Triggering Guaranteed In All 3 Quadrants MAXIMUM RATINGS [Rating OT Serbo value] unit_| Repotitive Peak Off-State Voltage Volts SS) SC251B, SC250B, SC250B3 200 _ i '$C251D, SC250D, SC250D3 400 'SC251M, SC250M, SC250M3 600 CASE 174-04 ‘SC251N, SC250N 800 (TO-203) Peak Non-Repetitive Surge Current TSM ‘Amps: PRESS FIT {One Full Cycle, 60 Hz) Circuit Fusing Considerations A2s ty t=1ms t=8.3ms ir [ sk Gna Power Ra 10 | ; CASE 175-03 [Average GatePower Poa | 08 | Wart | . STYLES [Peak Gus Power ice Wian = 10a) | tom_| 2 | Are | scase [opering raion Tompeoue Range [ty | =a v6] | [storge Tempero fangs Tg [ao vs |_| ; a ‘THERMAL CHARACTERISTICS [choses Srmbal] won| a case anes Thermal Resistance, Junction to Case Rac “ow sexu 1 ‘SC260, SC251 2 ISOLATED STUD $C260( 13 23 EPRI SE PE IESE Re PERE ELE eS BS TELE RE PIT EE PEEL RE SO Sa MOTOROLA THYRISTOR DEVICE DATA 3-312 a
MOTOROLA SC {DIODES/OPTOF - ou DE eaezess oo79238 4 T Fasc $C250 e SC250( )3 ¢ SC251 ELECTRICAL CHARACTERISTICS (Tc = +25°C unless otherwise noted. Values apply for elther polarity of Main Terminal 2 Characteristics referenced to Main Terminal 1.) [ harncterstio | Symbot [min | Typ [Max | Unie | Peak Forward or Reverse Blocking Current IpRM: RRM. (Rated Vor or VaRM. gate open) Tc = 25°C BA Te = +116°C mA Peak On-State Voltage VIM (itm = 21 A, Pulse Width = 1 ms, Duty Cycle < 2%) Critical Rate of Rise of Off-State Voltage dv/dt Vins ! (Rated VpRM, Gate Open-Circuited, ! Exponential Waveform) To = +116°C j Critical Rate-of-Rise of Commutating Off-State Voltage, Note 1 dv/dt(c) Vips | (ttiaMs) = Rated RMS On-State Current, Vp = VoRM) (Gate Open-Circuited, Commutating di/dt = 8 A/ms) $C260, SC251 Tc = +84°C $C250( 13 To = +78°C | DC Gate Trigger Current (Continuous de) lor I (Vp = 12 Vde) MT2( +), G(+); MT2(—), G(—); RL = 100 Ohms 50 . MT2(+), G(—); RL = 50 Ohms 50 DC Gate Trigger Current (Continuous de) (Vp = 12 Vde, Tc = —40°C) MT2(+), G(+); MT2(—), G{-); RL = 60 Ohms 80 MT2(+), G(—); RL = 25 Ohms 80 DC Gate Trigger Voltage (Continuous dc) Vet Vde (Vp = 12 Vde) MT2( +), G(+); MT2(—), G(—); RL = 100 Ohms , MT2(+), G(-); RL = 50 Ohms DC Gate Trigger Voltage (Continuous dc) VGT Vde (Vp = 12 Vde, Tc = —40°C) x j MT2(+), G(+); MT2(—), G{—); RL = 50 Ohms. 53 i MT2(-+), G(—); RL = 25 Ohms j DC Gate Non-Trigger Voltage Veo Vde (Vp = Rated VpRM. RL = 1K Ohms, Tc = 115°C) All Trigger Modes Holding Current (Vp = 24 Vde, Peak Initiating Current = 0.5 A, Pulse Width = 0.1 to 10 ms, Gate Trigger) (Source = 7 V, 20 Ohms) To = +25°C Tc = -40°C Latching Current I (Vp = 24 Vde, Gate Trigger Source = 15 V, 100 Ohms, Pulse Width = 50 ys, 5 ws Maximum Rise and Fall Times) FIGURE 1 — CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION aes se Oe | pot 1S ie Ht PCOS Pee EA é S Ea ga | | Naa a eee ee PT Se zt 4a} | ir] ‘Botaveo stu fs es | [| i a Peer LOCCcercrs) } acer MOTOROLA THYRISTOR DEVICE DATA 3-313