MAC245 MOTOROLA | Alldatasheet
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MOTOROLA SC (DIODES/OPTO) 256 D MM 6367255 OOS107b 6 mm TaAS-IS Triacs $C246 Silicon Bidirectional Thyristors «+ designed primarily for industrial and military applications for the fullwave control of ac loads in applications such as light dimmers, power supplies, heating controls, motor controls, welding equipment and power switching systems. ames, s © All Diffused and Glass Passivated Junctions for Greater Stability ETE oe © Pressfit and Stud Packages . © Gate Triggering Guaranteed In All 4 Quadrants Lamy MAXIMUM RATINGS Repetitive Peak Off-State Voltage (1) V>RM Volts To = ~40°C to + 100°C y 862468, MAC245B 200 4S) ‘$C246D, MAC245D_ 400 Se $C246M, MAC245M 600 Y CASE 174-04 ‘SC246N, MAC245N 800 _@ {(TO-203AA) [RMS Onstawe Curent ims] 10 Ams yin Peak Non-Repetitive Surge Current ITsM PRESS FIT {One Full Cycle, 60 Hz) Circuit Fusing Considerations 12 3 t=1ms t=83ms [ Peak Gaterower Pa [10 | Wate CASE 263-04 [Average Gate Power Paw | 08 | Wet STVLE2 macass [ Sorege Tenperauie ange | Tag =eot0 +5 | o| [sud torque = Pe Tint. ‘THERMAL CHARACTERISTICS ‘Thermal Resistance, Junction to Ges [Rac | 2 | “cw | (1) Ratings: orety for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. SEE ee ee ee a MOTOROLA THYRISTOR DEVICE DATA 3-195
MOTOROLA SC (DIODES/OPTO) @SE D MM 6367255 0081077 T mm MAC245 @ SC246 T as- | is” ELECTRICAL CHARACTERISTICS (Tc = +25°C unless otherwise noted.) A Peak Off-State Current (1) Rated VppM = Peak Off-State Voltage, Gate Open-Circuited —* Te = +26 To = +118C Peak On-State Voltage (1) VM Voits tM = 14 A Peak, Pulso Width = 1 ms, Duty Cycle < 2%, To = +26°C ‘Gritical Rate of Risa of Off-State Voltage (1) vide Volts/us Rated Vppm, Gate Open-Circuited, Exponential Waveform Te = +100°C Critical Rate-of-Rise of Commutating Off-State Voltage (1) ‘dvidt{c) Volts/us tr(ams) = Rated RMS On-Stata Currant VpAM = Rated Peak Off-Stato Voltage, Gate Open-Circuited, Commutating di/dt = 6.4 Ams To = +788°C DC Gata Trager Current (2) Iet Vp = 12 Vde Trigger Mode MT2(+), Gatel-+), RL = 100 Ohms 60 MT2(—), Gate), RL = 100 Ohms 50 MT2(+), Gatel—), RL = 60 Ohms 60 MT2(+), Gate(+), RL = 60 Ohms, Tc = ~40°C 80 MT2(—), Gatel—), RL = 50 Ohms, Tc = ~40°C 80 MT2(+), Gatel—), RL = 25 Ohms, To = 40°C 80 DC Gate Trigger Voltage (2) Ver Vac Vp = 12 Vdo Trigger Mode MT2(+), Gatel+), RL = 100 Ohms - 25 MT2(—), Gate(—), RL = 100 Ohms: - 25 MT2(+), Gate(—), RL = 50 Ohms - 25 MT2(+), Gatel+), RL = 60 Ohms, Tc = 40°C - 35 MT2{-), Gate(-, RL = 50 Ohms, Te = -40°C - 35 MT2(+), Gatel—), RL = 26 Ohms, Tg = ~40°C - 35 MT2(+), Gatel+), RL = 1000 Ohms, To = +100°C (2,3) 02 - MT2{-), Gate(-}, RE = 1000 Ohms, Te = +100°C (2,3) 02 - MT2(+), Gatel—), RL = 1000 Ohms, Te = +100°C (2,3) 02 - MT2(—), Gatel+), RL = 1000 Ohms, Te = +100°C (2,3) 02 = Holding Current (1) Main Terminal Voltage = 24 Vde, Poak Initiating Current = 0.6 A, Pulse Width = 0.1 to 10 ms Gate Trigger Source = 7 V, 20 Ohms To = +260 To = -40°C Latching Current (2) i mAdo Main Terminal Source Voltage = 24 Vdo, Gate Trigger Source = 16 V, 100 Ohms, Pulse Width = 50 ys, Rise and Fall Times Maximum = 5 ps Trigger Mode MT2(+), Gatel +) 400 MT2(-), Gate(-} 100 MT2(+), Gatel-) 200 MT2(+), Gate(+), Te = —40°C 200 MT2{-), Gatel—), To = 40°C 200 MT2(+1, Gatel-), Te = 40°C 400 NOTES: 1. Values apply for olther polarity of Main Tarminal 2 characteristics referenced to Main Terminal 1. 2, Maln Terminal 1 Is the raferance terminal, 3. With Vp equal to rated off-state voltage. Se MOTOROLA THYRISTOR DEVICE DATA 3-196