SBYV27-50 TAYCHIPST | Alldatasheet

Document overview

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Technical content

50V-200V 2.0A SBYV27-50 THRU SBYV27-200 1 of 2 Mechanical Data Web Site: www.taychipst.com

FEATURES

E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

  • Plastic package has Underwriters Laboratories Flammability Classification 94V-0
  • Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes
  • Ultrafast recovery time for high efficiency
  • Excellent high temperature switching
  • Soft recovery characteristics
  • Glass passivated junction
  • High temperature soldering guaranteed: 250°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Case: JEDEC DO-204AC molded plastic body over passivated chip Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.015 ounce, 0.4 gram Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbols SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units Maximum repetitive peak reverse voltage V RRM 50 100 150 200 V Maximum RMS voltage V RMS 35 70 105 140 V Maximum DC blocking voltage V DC 50 100 150 200 V Minimum reverse breakdown voltage at 100 µ AV BR 55 110 165 220 V Maximum average forward rectified current I F(AV) 2.0 A 0.375” (9.5mm) lead lengths at T L = 85ºC Peak forward surge current 10 ms single half sine-wave superimposed on rated load (JEDEC Method) at T J = 150ºC I FSM 50 A Typical thermal resistance (NOTE 1) R Θ JA 45 °C/W Operating junction and storage temperature range T J , T STG -55 to +150°C °C

Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbols SBYV27-50 SBYV27-100 SBYV27-150 SBYV27-200 Units Maximum instantaneous forward T J = 25°C 1.07 voltage at 3.0A (NOTE 2) T J = 150°C V F 0.88 V Maximum DC reverse current T A = 25°C I R 5.0 µ A at rated DC blocking voltage T A =100°C 200 Maximum reverse recovery time at I F =0.5A, I R =1.0A, I rr =0.25A t rr 15 ns Typical junction capacitance at 4.0V, 1MHz C J 15 pF Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length (2) Pulse test: 300 µ s pulse width, duty cycle Soft Recovery Ultrafast Plastic Rectifier

2 of 2E-mail: sales@taychipst.com Web Site: www.taychipst.com 50V-200V 2.0A SBYV27-50 THRU SBYV27-200 Soft Recovery Ultrafast Plastic Rectifier Temperature ( Fig. 1 – Maximum Forward Current Derating Curves Average Forward Rectified Current (A) Fig. 3 – Typical Instantaneous Forward Characteristics Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Instantaneous Reverse Leakage Current ( µ Fig. 4 – Typical Reverse Leakage Characteristics Fig. 6 – Typical Junction Capacitance Number of Cycles at 50 H Z Reverse Voltage (V) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Junction Temperature ( Recovered Store Change / Reverse Recovery Time, nC/ns Junction Capacitance, pF Fig. 5 – Reverse Switching Characteristics 100 125 150 175 0.5 1.0 1.5 2.0 2.5 3.0 Resistive or Inductive Load 0.375" (9.5mm) Lead Length T L Lead Temperature T A , Ambient Temperature P.C.B. Mounted Copper Pads 100 10ms Single Half Sine-Wave T J = 175 C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 100 T J = 100 C T J = 25 C Pulse Width = 300 µ s 1% Duty Cycle 100 0.1 100 1000 100 125 150 175 di/dt=150A/ µ s di/dt=100A/ µ s di/dt=20A/ µ s di/dt=50A/ µ s di/dt=50A/ µ s di/dt=100A/ µ s di/dt=150A/ µ s di/dt=20A/ µ s I F = 2.0A V R =30V 0.1 100 100 T J = 25 C f = 1.0MH Z Vsig = 50mVp-p t rr Q rr T J = 25 C T J = 100 C