SBW-5089Z

SBW-5089_1 SIRENZA | Alldatasheet

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Technical content

EDS-103325 Rev. C Phone: (800) SMI-MMIC http://www.sirenza.com The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.

303 South Technology Court

Broomfield, CO 80021 Gain & Return Loss vs. Frequency ID= 80 mA (Typ.) Tuned Application Circuit (fig.1) The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8 GHz and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke. The matte tin finish on Sirenza’s lead-free “Z” package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants. SBW-5089 SBW-5089Z DC-8 GHz Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features

• Available in Lead Free, RoHS Compliant green package ( Z Suffix )
• 50 Ohm Cascadable Gain Block
• Wideband Flat Gain to 3 GHz: +/-1.4dB
• P1dB = 13.4 @ 6 GHz
• Input / Output VSWR < 2:3 to 8 GHz
• Patented Thermal Design
• Single Voltage Supply Operation

Applications

• Wideband Instrumentation
• Fiber Optic Driver
• OC-48
• Basestation
• SAT COM Pb RoHS Compliant & PackageGreen 012345678 Frequency (GHz) Gain (dB) -25 -20 -15 -10 Return Loss (dB) Gain ORL IRL lobmyS retemaraP stinU ycneuqerF .niM .pyT .xaM G niaGlangiSllamS )dedebme-edsessolrotcennocdnadraobCP( Bd zHM058 zHM0003 zHM0024 zHM0006 3.91 0.71 5.41 3.02 0.81 2.71 5.51 3.12 0.91 5.61 P Bd1 noisserpmoCBd1tarewoPtuptuOm Bd zHM058 zHM05914 .81 1.02 4.91 PIO 3 tnioPtpecretnIredrOdrihTtuptuOm Bd zHM058 zHM05910 .23 5.53 0.43 tuoP 59-SIPCAcBd54-@rewoPtuptuO slennahCdrawroF9 mBdz HM05910 .31 htdiwdnaB) Bd01>(ssoLnruteRybdenimreteDz HM0 006 LRIs soLnruteRtupnIesactsroWB dz HM0006-CD7 0 1 LROs soLnruteRtuptuOesactsroWB dz HM0006-CD8 0 1 FNe rugiFesioNB dz HM05919 .34 .4 VD egatloVgnitarepOeciveDV 5 .49 .43 .5 ID tnerruCgnitarepOeciveDA m2 70 88 8 R HT l-j, )daelotnoitcnuj(ecnatsiseRlamrehTW /C°0 7 Test Conditions: VS = 8 V I D = 80 mA Typ. OIP 3 Tone Spacing = 1 MHz T L = 25ºC Bias Resistance = 39 Ohms Pout per tone = 0 dBm Z S = ZL = 50 Ohms

SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier EDS-103325 Rev. C Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 seicneuqerFgnitarepOyeKtaecnamrofrePFRlacipyT lobmySr etemaraPs tinU )zHM(ycneuqerF 0050 580 5910 0420 0530 085 LRIs soLnruteRtupnIB d6 26 29 15 12 15 .21 LROs soLnruteRtuptuOB d9 15 .712 11 15 .019 .01 S 21 noitalosIesreveRB d2 23 23 23 23 23 2 sgnitaRmumixaMetulosbA retemaraPt imiLetulosbA .xaM tnerruCeciveD I( D)0 31 Am .xaM eciveD V(egatloV D)V 6 .xaM rewoPtupnIFR mBd71+ detapissiDgnitarepO.xaM rewoP W56.0 .xaM pmeTnoitcnuJ T(. J) 1+ 05 C° pmeTgnitarepO T(egnaR. L) C°58+otC°04- .xaM pmeTegarotS . C°051+ yamstimilesehtfoenoynadnoyebecivedsihtfonoitarepO ,noitareposuonitnocelbailerroF.egamadtnenamrepesuac mumixamehtdeecxetontsumtnerrucdnaegatlovecivedeht .enoegapnoelbatehtnideificepsseulavgnitarepo :noisserpxegniwollofehtyfsitasosladluohssnoitidnocsaiB IDVD T(< J T- L R/) HT l-j, VS = 8 V I D = 80 mA Typ. OIP 3 Tone Spacing = 1 MHz T LEAD = 25ºC Bias Resistance = 39 Ohms Pout per tone = 0 dBm Z S = ZL = 50 Ohms Test Conditions: * 5.8GHz data measured with tuned app circuit in fig. 2. P1dB vs. Frequency 0123456 Frequency(GHz) P1dB (dBm) -40°C +25°C +85°C OIP3 vs. Frequency 0123456 Frequency (GHz) OIP3 (dBm) -40°C +25°C +85°C Noise Figure vs. Frequency 0123456 Frequency (GHz) NF (dB) -40°C +25°C +85°C

SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier EDS-103325 Rev. C Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 IS-95 @ 850MHz Adj. Channel Pwr. vs. Channel output Pwr. -70 -65 -60 -55 -50 -45 -40 -35 -30 6 8 10 12 14 16 dBm dBc -40°C +25°C +85°C IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power -70 -65 -60 -55 -50 -45 -40 -35 -30 6 8 10 12 14 16 dBm dBc -40°C +25°C +85°C 0123456789 1 0 Frequency (GHz) |S21| (dB) -40°C +25°C +85°C -40 -35 -30 -25 -20 -15 -10 0123456789 1 0 Frequency (GHz) |S11| (dB) -40°C +25°C +85°C -40 -35 -30 -25 -20 -15 -10 0123456789 1 0 Frequency (GHz) |S22| (dB) -40°C +25°C +85°C -30 -25 -20 -15 -10 0123456789 1 0 Frequency (GHz) |S12| (dB) -40°C +25°C +85°C NOTE: Full S-parameter data available at www.sirenza.com Typical RF Performance Over Lead Temperature In Basic Application Circuit (Fig.2) ( Bias: ID= 80 mA Typ.) |S11| vs. Frequency|S21| vs. Frequency |S12| vs. Frequency |S22| vs. Frequency

Figure 1. Tuned Application Circuit

SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier EDS-103325 Rev. C Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 1 uFRBIAS 1000 pF CBCB CD LC VS Fig. 2 Basic Application Circuit ediuGtuOniPeciveD #niPn oitcnuFn oitpircseD

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SBW-5089 DC-8.0 GHz Cascadeable MMIC Amplifier EDS-103325 Rev. C Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 SOT-89 PCB Pad Layout Dimensions in inches [millimeters] SOT-89 Nominal Package Dimensions Dimensions in inches [millimeters] A link to the SOT-89 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com. RF OUT RF I N Notes:

1 Solder the copper pad on the backside of the device

package to the ground plane.

2 Provide a large ground pad area under device pins 1,

2, 4, & 5 with many plated via holes as shown.

3 Dimensions given for 50 Ohm RF I/O lines are for 31

mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants. 4. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides.