SBW-5089 SIRENZA | Alldatasheet

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Technical content

EDS-103325 Rev. A 303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC http://www.sirenza.com The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not auth orize or warrant any Sirenza Microdevices product for use in life- support devices and/or system.Copyright 2003 Sirenza Microdevices, Inc.. All worldwide rights reserved. Preliminary Data Sheet SBW-5089 DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features • Wideband Flat Gain to 3GHz: +/-1.4dB • P1dB = 13.4 @ 6GHz • Input / Output VSWR < 2:3 to 8GHz • Operates From Single Supply • Low Thermal Resistance • Darlington Configuration

Applications

• Wideband Instrumentation • Fiber Optic Driver • OC-48 • Basestation • SAT COM Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 8 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non- linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. lobmyS retemaraP stinU ycneuqerF .niM .pyT .xaM G niaGlangiSllamS )dedebme-edsessolrotcennocdnadraobCP( Bd zHM058 zHM0003 zHM0024 zHM0006 3.91 0.71 2.61 5.41 3.02 0.81 2.71 5.51 3.12 0.91 2.81 5.61 P Bd1 noisserpmoCBd1tarewoPtuptuOm Bd zHM058 zHM05914 .81 1.02 4.91 PIO 3 tnioPtpecretnIredrOdrihTtuptuOm Bd zHM058 zHM05910 .23 5.53 0.43 tuoP 59-SIPCAcBd54-@rewoPtuptuO slennahCdrawroF9 mBdz HM05910 .31 htdiwdnaB) Bd01>(ssoLnruteRybdenimreteDz HM0 006 LRIs soLnruteRtupnIesactsroWB dz HM0006-CD7 0 1 LROs soLnruteRtuptuOesactsroWB dz HM0006-CD8 1 1 FNe rugiFesioNB dz HM05919 .34 .4 VD egatloVgnitarepOeciveDV 5 .49 .43 .5 ID tnerruCgnitarepOeciveDA m2 70 88 8 R HT l-j, )daelotnoitcnuj(ecnatsiseRlamrehTW /C°7 9 Test Conditions: VS = 8 V I D = 80 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm RBIAS = 39 Ohms T L = 25ºC Z S = ZL = 50 Ohms Gain & Return Loss Vs. Frequency See App Circuit Page 6 -30 -20 -10 012345678 Frequency (GHz) S21 S22 S11

2 EDS-103325 Rev. A Preliminary SBW-5089 Wideband DC-8 GHz MMIC Amplifier 303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Preliminary Data Sheet Typical RF Performance at Key Operating Frequencies VS = 8 V I D = 80 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm RBIAS = 39 Ohms T L = 25ºC Z S = ZL = 50 Ohms Frequency (MHz) Test Conditions: lobmyS retemaraP tinU 005 058 0591 0042 0053 *0085 LRIs soLnruteRtupnIB d6 26 29 15 12 15 .21 LROs soLnruteRtuptuOB d9 15 .712 11 15 .019 .01 S 12 noitalosIesreveRB d2 23 23 23 23 23 2 Frequency (MHz) Test Conditions: VS = 8 V I D = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0dBm RBIAS = 39 Ohms TL = 25ºC Z S = ZL = 50 Ohms Basic Application Circuit Absolute Maximum Ratings retemaraP timiLetulosbA .xaM tnerruCeciveD I( D) 1 03 Am .xaM eciveD V(egatloV D)V 6 .xaM rewoPtupnIFR mBd71+ rewoPdetapissiDgnitarepOxaMW 56.0 .xaM pmeTnoitcnuJ T(. J) C°051+ pmeTgnitarepO T(egnaR. L) C°58+otC°04- .xaM pmeTegarotS . C°051+ DSEC 1ssalC esuacyamstimilesehtfoenoynadnoyebecivedsihtfonoitarepO ecivedeht,noitareposuonitnocelbailerroF.egamadtnenamrep seulavgnitarepomumixamehtdeecxetontsumtnerrucdnaegatlov .enoegapnoelbatehtnideificeps :noisserpxegniwollofehtyfsitasosladluohssnoitidnoCsaiB IDVD T(< J T- L R/) HT Tl-j, L T= DAEL P1dB vs. Frequency 7.5 12.5 17.5 22.5 0123456 Frequency(GHz) P1dB(dBm) +25c -40c +85c OIP3 vs. Frequency 17.5 22.5 27.5 32.5 37.5 0123456 Frequency(GHz) OIP3(dBm) +25c -40c +85c Noise Figure vs. Frequency 0123456 Frequency(GHz) Noise Figure(dB) +25c -40c +85c *NOTE: 5.8GHz data measured with tuned app circuit

3 EDS-103325 Rev. A Preliminary SBW-5089 Wideband DC-8 GHz MMIC Amplifier 303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Preliminary Data Sheet Test conditions: Bias Tee, Id=80mA, Vsup ply=8V, 39ohm drop resistor Basic App Circuit page 5 |S11| vs. Frequency |S21| vs. Frequency |S12| vs. Frequency |S22| vs. Frequency IS-95 @ 850MHz Adj. Channel Pwr. vs. Channel output Pwr. -70 -65 -60 -55 -50 -45 -40 -35 -30 6 8 10 12 14 16 dBm dBc +25c -40c +85c IS-95 @ 1950MHz Adj. Channel Pwr. vs. Channel Output Power -70 -65 -60 -55 -50 -45 -40 -35 -30 6 8 10 12 14 16 dBm dBc +25c -40c +85c -40 -30 -20 -10 0123456789 1 0 Frequency (GHz) S11 (dB) +25C -40C +85C 0123456789 1 0 Frequency (GHz) S21 (dB) +25C -40C +85C -30 -25 -20 -15 -10 0123456789 1 0 Frequency (GHz) S12 (dB) +25C -40C +85C -40 -30 -20 -10 0123456789 1 0 Frequency (GHz) S22 (dB) +25C -40C +85C

4 EDS-103325 Rev. A Preliminary SBW-5089 Wideband DC-8 GHz MMIC Amplifier 303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Preliminary Data Sheet Test conditions: Bias Tee, Id=80mA, Vsupply=8V, 39ohm drop resistor Tuned Circuit Application with broadband bias tee page 6 |S11| vs. Frequency |S21| vs. Frequency |S12| vs. Frequency |S22| vs. Frequency -40 -30 -20 -10 0123456789 1 0 Frequency (GHz) S11 (dB) +25C -40C +85C 0123456789 1 0 Frequency (GHz) S21 (dB) +25C -40C +85C -30 -25 -20 -15 -10 0123456789 1 0 Frequency (GHz) S12 (dB) +25C -40C +85C -40 -30 -20 -10 0123456789 1 0 Frequency (GHz) S22 (dB) +25C -40C +85C

5 EDS-103325 Rev. A Preliminary SBW-5089 Wideband DC-8 GHz MMIC Amplifier 303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Preliminary Data Sheet e c n e r e f e R r o t a n g i s e D ) z h M ( y c n e u q e r F 0 0 5 0 5 8 0 5 9 1 0 0 4 2 0 0 5 3 CB F p 0 22F p 0 01F p 86F p 65F p 9 3 CD F p 0 01F p 86F p 22F p 22F p 5 1 LC H n 86H n 33H n 22H n 81H n 5 1 Basic Application Circuit (no tuning elements) RF in RF out 1 uF CBCB CD VS RBIAS 1000 pF SWA-5089 Application Circuit Element Values Part Number Ordering Information r e b m u N t r a Pe z i S l e e R l e e R / s e c i v e D 9 8 0 5 - W BS" 70 0 0 1 The part will be marked with an “BW5” designator on the top surface of the package. Part Identification Marking # n i P n o i t c n u F n o i t p i r c s e D 1 N I FRe s u e h t s e r i u q e r n i p s i h T . n i p t u p n i F R r o t i c a p a c g n i k c o l b C D l a n r e t x e n a f o . n o i t a r e p o f o y c n e u q e r f e h t r o f n e s o h c 4 , 2 D NGs e l o h a i v e s U . d n u o r g o t n o i t c e n n o C d a e l e c u d e r o t e c n a m r o f r e p t s e b r o f s a s d a e l d n u o r g o t e s o l c s a e c n a t c u d n i . e l b i s s o p 3 / T U O F R S A I B s i e g a t l o v C D . n i p s a i b d n a t u p t u o F R C D a e r o f e r e h t , n i p s i h t n o t n e s e r p r o f y r a s s e c e n s i r o t i c a p a c g n i k c o l b . n o i t a r e p o r e p o r p Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. BW5 I r o f s e u l a V r o t s i s e R s a i B d e d n e m m o c e RD A m 0 8 = R S A I BV ( =S V -D I / )D V ( e g a t l o V y l p p u SS)V 5 .7V 8V 01V 2 1 R S A I B 339 38 61 9 R : e t o NS A I B . e r u t a r e p m e t r e v o y t i l i b a t s s a i b C D s e d i v o r p 1 uF RBIAS 1000 pF CBCB CD LC VS BW51 3123 Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. LC

6 EDS-103325 Rev. A Preliminary SBW-5089 Wideband DC-8 GHz MMIC Amplifier 303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Preliminary Data Sheet Application Circuit with 5 - 8GHz tuning and broadband bias tee RF in RF out SWA-5089 Zθθθθθ = 50ΩΩΩΩΩ Elec. Len. = 13.1##### SIRENZA MICRODEVICES ECB-100607 Rev B IN OUT BW5 C1 C1 = 0.1pF 0805 AVX Substrate Material = Getek ML200C, 0 .031" thick, Er = 4.2, 1oz. cladding DC BLOCK

7 EDS-103325 Rev. A Preliminary SBW-5089 Wideband DC-8 GHz MMIC Amplifier 303 South Technology Court, Broomfield, CO. 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Preliminary Data Sheet PCB Pad Layout Dimensions in inches [millimeters] Nominal Package Dimensions Dimensions in inches [millimeters] Refer to package drawing posted at www.sirenza.com for tolerances. Bottom View Side View