SBT5853PT1G_15 KEXIN | Alldatasheet
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www.kexin.com.cn 1 Transistors PNP Transistors SBT5853PT1G ■ Features
- Collector Current Capability IC=-2A
- Collector Emitter Voltage VCEO=-35V +0.2 -0.1 1 2 3 456 Unit: mm 1.6 +0.2 -0.12.8 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.1 -0.1 SOT-23-6( ) +0.01 -0.01 +0.2 -0.1 0.4-0.1 +0.1 COLLECTOR 1, 2, 5, 6 BASE EMITTER ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emitter Voltage VCEO -35 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -2 Peak Collector Current ICM -5 (Note.1) 625 mW Collector Power Dissipation (Note.2) 1 Single Pulse < 10 sec (Note.2) 1.75 Thermal Resistance From Junction To Ambient (Note.1) 200 (Note.2) 120 Thermal Resistance From Junction To Lead RθJL 80 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V A RθJA ℃/W PC W Note.1:FR−4 @ Minimum Pad Note.2:FR−4 @ 1.0 X 1.0 inch Pad
www.kexin.com.cn2 Transistors PNP Transistors SBT5853PT1G ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -55 Collector- emitter breakdown voltage VCEO Ic= -10 mA， IB=0 -35 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -35 V , IE=0 -100 Collector- emitter cut-off current ICES VCE= -35V , IE=0 -100 Emitter cut-off current IEBO VEB= -4V , IC=0 -100 IC=-800 mA, IB=-80mA -0.12 -0.16 IC=- 2A, IB=-200mA (Note.1) -0.23 -0.3 Base - emitter saturation voltage VBE(sat) IC=-1.2A, IB=-120mA (Note.1) -0.68 -0.85 Base−Emitter Turn−on Voltage VBE(on) VCE= -1.2V, IC= -500mA (Note.1) -0.81 -0.875 DC current gain hFE VCE= -1.2V, IC= -500 mA 200 Turn−on time ton VCC = −10 V, IB1 = −100 mA, IC = −1A, RL = 3Ω 35 Turn−off time toff VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1A, RL = 3Ω 255 Collector input capacitance Cib VEB= -0.5V, f=1MHz 600 650 Collector output capacitance Cob VCB= -3V,f=1MHz 85 100 Transition frequency fT VCE= -5V, IC= -100mA,f=100MHz 100 MHz Collector-emitter saturation voltage VCE(sat) V ns pF V nA Note.1: Pulsed Condition: Pulse Width = 300us, Duty Cycle ≤ 2% ■ Marking Marking G5̻