SBT5551F AUK | Alldatasheet
Document overview
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Technical content
Features
- high collector breakdown voltage : VCBO = 180V, VCEO = 160V
- Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
- Complementary pair with SBT5401F
Ordering Information
Type NO. Marking Package Code SBT5551F FNF SOT-23F O u t l i n e D i m e n s i o n s u n i t : mm SSeemmiiccoonndduuccttoorr PIN Connections 1. Base 2. Emitter 3. Collector 0.4±0.05 0~0.1
1.90 BSC
2.9±0.1 0.15±0.05 2.4±0.1 0.9±0.1 1.6±0.1
A b s o l u t e m a x i m u m r a t i n g s (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage V CBO 180 V Collector-Emitter voltage V CEO 160 V Emitter-Base voltage V EBO 6 V Collector current I C 600 mA Collector dissipation P C 200 mW Junction temperature T j 150 °C Storage temperature T stg -55~150 °C E l e c t r i c a l C h a r a c t e r i s t i c s (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BV CBO IC=100µA, IE=0 180 - - V Collector-Emitter breakdown voltage BV CEO I C=1mA, IB=0 160 - - V Emitter-Base breakdown voltage BV EBO IE=10µA, IC=0 6 - - V Collector cut-off current I CBO V CB=120V, IE=0 - - 100 nA Emitter cut-off current I EBO V EB=4V, IC=0 - - 100 nA DC current gain h FE (1) V CE=5V, IC=1mA 80 - - DC current gain h FE (2) V CE=5V, IC=10mA 80 - 250 - DC current gain h FE (3) V CE=5V, IC=50mA 30 - - Collector-Emitter saturation voltage VCE(sat)(1) * IC=10mA, IB=1mA - - 0.2 V Collector-Emitter saturation voltage VCE(sat)(2) * IC=50mA, IB=5mA - - 0.5 V Base-Emitter saturation voltage VBE(sat)(1) * IC=10mA, IB=1mA - - 1 V Base-Emitter saturation voltage VBE(sat)(2)* IC=50mA, IB=5mA - - 1 V Transition frequency f T V CE=10V, IC=10mA 100 - 400 MHz Collector output capacitance C ob V CB=10V, IE=0, f=1MHz - - 6 pF * : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
v Electrical Characteristic Curves Fig. 2 I C - VBE Fig. 1 h FE - IC Fig. 4 V CE(sat), VBE(sat) - IC Fig. 3 fT - IC Fig. 5 Cob - VCB