SBT5401F AUK | Alldatasheet
Document overview
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Technical content
Features
- high collector breakdown voltage : VCBO = -160V, VCEO = -150V
- Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
- Complementary pair with SBT5551F
Ordering Information
Type NO. Marking Package Code SBT5401F NFN SOT-23F O u t l i n e D i m e n s i o n s u n i t : mm SSeemmiiccoonndduuccttoorr PIN Connections 1. Base 2. Emitter 3. Collector 0.4±0.05 0~0.1
1.90 BSC
2.9±0.1 0.15±0.05 2.4±0.1 0.9±0.1 1.6±0.1
A b s o l u t e m a x i m u m r a t i n g s (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage V CBO -160 V Collector-Emitter voltage V CEO -150 V Emitter-Base voltage V EBO -5 V Collector current I C -600 mA Collector dissipation P C 200 mW Junction temperature T j 150 °C Storage temperature T stg -55~150 °C E l e c t r i c a l C h a r a c t e r i s t i c s (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BV CBO IC=-100µA, IE=0 -160 - - V Collector-Emitter breakdown voltage BV CEO I C=-1mA, IB=0 -150 - - V Emitter-Base breakdown voltage BV EBO IE=-10µA, IC=0 -5 - - V Collector cut-off current I CBO V CB=-120V, IE=0 - - -100 nA Emitter cut-off current I EBO V EB=-3V, IC=0 - - -100 nA DC current gain h FE (1) V CE=-5V, IC=-1mA 50 - - DC current gain h FE (2) V CE=-5V, IC=-10mA 60 - 240 - DC current gain h FE (3) V CE=-5V, IC=-50mA 50 - - Collector-Emitter saturation voltage VCE(sat)(1) * IC=-10mA, IB=-1mA - - -0.2 V Collector-Emitter saturation voltage VCE(sat)(2) * IC=-50mA, IB=-5mA - - -0.5 V Base-Emitter saturation voltage VBE(sat)(1) * IC=-10mA, IB=-1mA - - -1 V Base-Emitter saturation voltage VBE(sat)(2)* IC=-50mA, IB=-5mA - - -1 V Transition frequency f T V CE=-10V, IC=-10mA 100 - 400 MHz Collector output capacitance C ob V CB=-10V, IE=0, f=1MHz - - 6 pF * : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%
Electrical Characteristic Curves Fig. 5 C ob - VC B Fig. 2 I C - VBE Fig. 1 h FE - IC Fig. 4 V CE(sat), VBE(sat) - IC Fig. 3 fT - IC