SBT1030

SBT1020_13 DIOTEC | Alldatasheet

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SBT1020 ... SBT10100 SBT1020 ... SBT10100 Schottky Barrier Rectifier Diodes – Single Diode Schottky-Barrier-Gleichrichterdioden – Einzeldiode Version 2013-05-07 Dimensions - Maße [mm] Nominal current Nennstrom 10 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...100 V Plastic case – Kunststoffgehäuse TO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 10 A SBT1020 20 20 < 0.48 < 0.55 SBT1030 30 30 < 0.48 < 0.55 SBT1040 40 40 < 0.48 < 0.55 SBT1045 45 45 < 0.48 < 0.55 SBT1050 50 50 < 0.63 < 0.70 SBT1060 60 60 < 0.63 < 0.70 SBT1090 90 90 < 0.78 < 0.85 SBT10100 100 100 < 0.78 < 0.85 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 10 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBT1020... SBT1060 TA = 25°C IFSM 135/150 A Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBT1090... SBT10100 TA = 25°C IFSM 115/125 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 80 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C ≤ 200°C

1 Tj = 25°C

1 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 Type Typ 5.08±0.1 0.8 ±0.2 1.3±0.1 10.1±0.3 3.9 ±0.3 2.8 ±0.3 13.9 ±0.3 14.9 ±0.7 Ø ±0.2 3.8 1.2 ±0.2 0.42 ±0.1 4.5±0.2 2.67±0.2 8.7 ±0.3

SBT1020 ... SBT10100 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM VR = VRRM IR IR < 300 µA < 7 mA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 3 K/W 2 http://www.diotec.com/ © Diotec Semiconductor AG 120 100 [%] IFAV Rated forward current vs. temp. of the case [°C]TC 150100500 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) SBT1020...SBT1045 SBT1050, SBT1060 SBT1080, SBT10100 [A] IF 0 VF 0.4 0.6 [V] 1.0