SBT1020 DIOTEC | Alldatasheet

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‘Diotec SBT1020 ... SBT10100 J Semiconductor SBT1020 ... SBT10100 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2005-12-07

4084 Nominal current 10A

T ij =~ 4 Repetitive peak reverse voltage 20...100 V R Periodische Spitzensperrspannung "B + Plastic case TO-220AC fs 4 Kunststoffgehause n I Weight approx. 1.89 mS brs 123 Gewicht ca,

709 Plastic material has UL classification 94V-0

— 5.08 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in tubes. Dimensions - MaBe [mm] Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Repetitive peak reverse voltage Surge peak reverse voltage Forward voltage Typ Periodische Spitzensperrspannung _StoBspitzensperrspannung Durchlass-Spannung No VN =5A I-=10A SBT1020 20 20 < 0.47 < 0.54 SBT1030 30 30 < 0.47 < 0.54 SBT1040 40 40 < 0.47 < 0.54 SBT1045 45 45 < 0.47 < 0.54 SBT1050 50 50 < 0.57 < 0.64 SBT1060 60 60 < 0.57 < 0.64 SBT1090 90 90 < 0.72 < 0.79 SBT10100 100 100 < 0.72 < 0.79 Max. average forward rectified current, R-load Tc = 100°C Taw 10A Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current f>15Hz Trew 30 A’) Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave SBT1020... Ta = 25°C Tes 135/150 A StoBstrom fiir eine 50/60 Hz Sinus-Halbwelle SBT1060 Peak forward surge current, 50/60 Hz half sine-wave SBT1090... Ta = 25°C Tesw 115/125A StoBstrom fiir eine 50/60 Hz Sinus-Halbwelle SBT10100 Rating for fusing, t < 10 ms Ta = 25°C rt 80 A’s Grenzlastintegral, t < 10 ms Junction temperature — Sperrschichttemperatur T; -50...4+150°C Storage temperature — Lagerungstemperatur Ts -50...4175°C

1 T,= 25°C

2 Max. temperature of the case Tc = 100°C ~ Max. Temperatur des Gehauses T: = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1

% . J Diotec Semiconductor $BT1020 ... SBT10100 Characteristics Kennwerte Leakage current SBT1020 ... SBT1040 T; = 25°C Ve = Verm Ik < 500 pA Sperrstrom T,= 100°C Va = Vram Ik <45mA Leakage current SBT1045 ...SBT10100 T, = 25°C Va = Ven Ik < 300 YA Sperrstrom T; = 100°C Ve = Ver Ik <25mA Thermal resistance junction to case Rene <3K/W Warmewiderstand Sperrschicht - Gehduse ——— cg OPE TTA TS TCE A a Peery 10 ee ES | | ft | WNT fT = === “ET TTT TT oan) saa 5 (ELE | | | | ft Nyy Ee AAS 40 _ FECA) | eter gO » EE I, L oo ona ° 0 T. 50 100 150 [°C] 0 Vv 04 06 [Vv] 10 Rated forward current vs. temp. of the case Forward characteristics (typical values) Zul. Richtstrom in Abh. v. d. Gehausetemperatur Durchlasskennlinien (typische Werte) 2 http://www.diotec.com/ © Diotec Semiconductor AG