SB1545L ZSELEC | Alldatasheet
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Features
atings and Electrical Characteristics @T A=25° C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. 1 of 3 Top View Bottom View LEFT P IN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOMSIDE HEAT SINK Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SB1545L-SB15200L 15100L1560L1550L1545L SBSBSB -55 to +150 -55 to +150 DC At Rated DC Blocking Voltage T =100 Peak Reverse Curent T =25 Junctionto Ambient Typical Thermal Resistance Average Rectified Output Current (Note1) Unit V A mA ℃ /W storage temperature range Note:1.Valid Provided that are kept at ambient temperature at a distance of 9.5mm from the case. Operating junction temperature range 0.3 VR(RMS) Non-Repetitive Peak Forward Surge8.3ms Single Half Sine-Wave Superimposed on rated Parameter Symbol V RRM DC blocking voltage V load(JEDEC Method) Working Peak Reverse Voltage Peak Repetitive Reverse Voltage VRWM V V A250 RMS Rectified Voltage (Note2) IO IFSM VFM IR RθJ A RθJ L TJ TST G A A 1580L SB SB 5150L SB 50 60 80 100 150 35 42 56 70 105 110 3.5 15200L SB 200 140 SB1545L-SB15200L ures Case:TO-277B Molded Plastic "Green" Molding Compound Excellent High Temperature Stability Lead Free: For RoHS/Lead Free Version High Thermal Reliability Ultra Lo w Power Loss, High Efficiency High Foward Surge Capability High Junction Temperture Bypass Diodes for Solar Panels! M echanic al Data ! Ter minals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Mounting Position: Any ! Marking: Type Number Patented Super Barrier Rectifier Technology! ! Schottky Barrier Chip T =25 @IF=5A℃A T =25 @IF=10A℃A Typ M ax. Forward Voltage Drop T =25 @IF=1A℃A 0.29 0.37 0.470.42 T =25 @IF=15A℃A 0.520.47 At I 2 t Rating for Fusing (t < 8.3ms) 2 2sI 259.4 0.55 0.75 0.90 Alldatasheet
R RR FIG.2 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 0.1 0.01 0.4 0.2 0.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.01 0.1 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 100 JUNCTION CAPACITANCE, pF 10000 1.0 4.0 10 100 1000 TJ=25 o C PULSE WIDTH=300uS DUTY CYCLE TJ=100 o C TJ=25 o C TJ = 25 o C f =
1.0 MHZ
Vsig = 50mVp-p SB1560L SB1545L-SB1550L SB1580L SB15100L SB15150L SB15200L FIG.1 - FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 25.0 20.0 10.0 5.0 15.0 0 50 100 150 LEAD TEMPERATURE, o C
60 Hz Resistive or
FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 150 200 250 300 1 10 100 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 2 of 3 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SB1545L-SB15200L SB1545L-SB15200L Alldatasheet
SB15**L TO-277B 3 of 3
Ordering Information
Part Number Case Packaging 5000/Tape & Re el Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Outline Dimensions Suggested Pad Layout Dim Min Max A 1.05 1.15 B 0.33 0.43 C 0.80 0.99 D 1.70 1.88 E 3.90 4.05 F 3.054 Ty p G 6.40 6.60 H 1.84 Ty p I 5.30 5.45 J 3.549 T yp K 0.75 0.95 L 0.50 0.65 M 1.10 1.41 Al l Dimensions in mm Dimensio ns Value (in mm) 1.840 a 3.360 c 1.390 b 4.860 d 1.400 G I C A B B E D C H F K J L M h a e d b c TO-277B e h 0.852 SB1545L-SB15200L SB1545L-SB15200L Alldatasheet