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Technical content

Features

  • Low switching noise
  • Low forward voltage (I F=2.0A, VF max=0.46V)
  • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Specifi cations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 15 V Nonrepetitive Peak Reverse Surge Voltage V RSM 15 V Average Output Current IO 2.0 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 20 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Package Dimensions unit : mm (typ) 7045-004 Product & Package Information
  • Package : EMH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL SB Lot No. 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 EMH8 1 4 0.125 0.20.2 2.1 1.7 0.5 2.0 0.2 0.750.05 SBS817-TL-E 2341 7658 71812 TKIM/62508SB TIIM TC-00001462 No. A0734-1/6 http://onsemi.com Semiconductor Components Industries, LLC, 2013 September, 2013 SBS817 Schottky Barrier Diode 15V, 2A, Low VF, Non-Monolithic Dual EMH8 Common Cathode Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=1mA 15 V Forward Voltage VF1I F=1.0A 0.33 0.39 V VF2I F=2.0A 0.39 0.46 V Reverse Current I R VR=7.5V 300 μA Interterminal Capacitance C V R=10V, f-1MHz 35 pF Reverse Recovery Time t rr IF=IR=100mA, See specifi ed Test Circuit. 10 ns Thermal Resistance Rth(j-a) When mounted on ceramic substrate (900mm ×0.8mm) 65 °C / W *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6). trr Test Circuit

Ordering Information

Device Package Shipping memo SBS817-TL-E EMH8 3,000pcs./reel Pb Free Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA Forward V oltage, VF -- V Forward Current, IF -- A IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- μA 0 0.05 0.15 IT12192 40 16 IT12193 0.001 0.01 0.1 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 862 1 01 21 4 Ta=1 75°C 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C 100°C 1.0 SBS817 No. A0734-2/6

(3) (5) (1) (2) (4) 0.01 23 7 0.1 52 2 37 1.05 IT13214 0.1 1.0 10 100 23 5 7 23 3 57 2 IT13213 f=1MHz (2) (3) (1) 0.5 1.2 0.2 0.4 0.6 0.8 1.0 2.52.01.0 1.5 IT12194 (4) 0.0004 0.0008 0.0012 0.0014 0.0002 0.0006 0.0010 861 2 1 4 10 16 IT12195 (1) (2) (3) (4) Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangularwave (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Ta -- IO θ 360° 180° 360° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Rectangularwave Sinewave Ambient Temperature, Ta -- °C Average Output Current, IO -- A PR(AV) -- VR Average Reverse V oltage, VR -- V (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sine wave θ 360° VR 180° 360° VR Average Reverse Power Dissipation, PR(A V) -- W IFSM -- t Time, t -- s Surge Forward Current, IFSM(Peak) -- A IS 20ms t Current waveform 50Hz sine wave C -- VR Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF SBS817 No. A0734-3/6

Embossed Taping Specifi cation SBS817-TL-E SBS817 No. A0734-4/6

Outline Drawing Land Pattern Example SBS817-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.4 0.3 0.5 1.9 SBS817 No. A0734-5/6

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