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Document overview
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Technical content
Features
- Small Switching noise
- Low forward voltage (I F=2A, VF max=0.40V) Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage V RSM 30 V Average Output Current IO 2.0 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Package Dimensions unit : mm (typ) 7012-001 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 VEC8 SBS811-TL-E Product & Package Information
- Package : VEC8
- JEITA, JEDEC : -
- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL SC LOT No. 91912 TKIM/61005SB MSIM TB-00001372 No.8254-1/6 http://onsemi.com Semiconductor Components Industries, LLC, 2013 September, 2013 SBS811 Schottky Barrier Diode 30V, 2A, Low VF, Non-Monolithic Dual VEC8 Common Cathode Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=2.0mA 30 V Forward Voltage V F IF=1.0A 0.30 0.35 V IF=2.0A 0.35 0.40 V Reverse Current I R VR=15V 1.25 mA Interterminal Capacitance C V R=10V, f=1MHz 75 pF Reverse Recovery Time t rr IF=IR=100mA, See specifi ed Test Circuit. 20 ns Thermal Resistance Rth(j-a)1 When Mounted in Cu-foiled area of 1.92mm ×0.03mm on glass epoxy substrate 75 °C / W Rth(j-a)2 When mounted on ceramic substrate (1000mm ×0.8mm) 70 °C / W trr Test Circuit
Ordering Information
Device Package Shipping memo SBS811-TL-E VEC8 3,000pcs./reel Pb Free 0 0.10 IT08568 100 35 IT08569 0.01 0.1 1.0 0.0001 0.001 0.01 0.1 1.0 5710 57100 201552 5 3 0 Ta=125 100 --25 Ta=125°C 100°C 75°C 50°C 25°C --25°C IF -- VF Forward Current, IF -- A Forward V oltage, VF -- V IR -- VR Reverse Current, IR -- mA Reverse V oltage, VR -- V Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA SBS811 No.8254-2/6
0.1 1.0 10 100 23 5 7 23 23 57 50 1.2 1.0 0.8 0.6 0.4 0.2 IT08571 IT08572 (1) (2) (4) (3) C -- VRPF(AV) -- IO Average Forward Current, IO -- A Average Forward Power Dissipation, PF(A V) -- W Reverse V oltage, VR -- V Interterminal Capacitance, C -- pFθ 360° Rectangular wave 180° 360° Sine wave (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 7 0.01 23 7 0.1 52 2 3 37 1.05 ID00435 IFSM -- t IS 20ms t Current waveform 50Hz sine wave Time, t -- s Surge Forward Current, IFSM(Peak) -- A SBS811 No.8254-3/6
Taping Specifi cation SBS811-TL-E SBS811 No.8254-4/6
Outline Drawing Land Pattern Example SBS811-TL-E Mass (g) Unit 0.015 * For reference mm Unit: mm 0.4 0.6 2.8 0.65 SBS811 No.8254-5/6
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