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© Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 0
1 Publication Order Number:
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 137°C 4.0 @ TL = 127°C A Nonrepetitive Peak Surge Cur- rent (Surge applied at rated load con- ditions halfwave, single phase, 60 Hz) IFSM 125 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP D/dTJ < 1/R/C0113JA. http://onsemi.com See detailed ordering and shipping information on page 3 of this data sheet.
ORDERING INFORMATION
5 A, 60 V
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ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 5.0 A, TJ = 25°C) (iF = 5.0 A, TJ = 100°C) VF 0.78 0.72 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR 0.150 2.5 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 /C0109s, Duty Cycle ≤ 2.0%. 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
Figure 6. Die Dimensions ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidia ries in the United States and/or other countries. copyright laws and is not for resale in any manner.