SBR05M100BLP KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 Dio des Bridge Rectifiers SBR05M100BLP ■ Features

  • Ultra Low Leakage Current
  • Excellent High Temperature Stability
  • Patented Super Barrier Rectifier Technology
  • Soft, Fast Switching Capability
  • 150ºC Operating Junction Temperature
  • Lead Free Finish, RoHS Compliant, “Green” Device ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VRM RMS Reverse Voltage VR(RMS) 70 Average Rectified Output Currents IO 500 mA Non-Repetitive Peak Forward Surge Current @ 8.3ms IFSM 8 A Power Dissipation Pd 560 mW 222 149 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 100 V Thermal Resistance Junction to Ambient RθJA ℃/W Note.1: FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per Note.2: Polymide PCB, 2 oz. copper; minimum recommended pad layout per ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 250 uA 100 VR= 100 V, TJ=25℃ 25 VR= 100 V, TJ=125℃ 250 Forward voltage V Reverse voltage leakage current VF IR uA ■ Marking Marking ** DA Top View Device Schematic Top View Pin Configuration N/C~ DFN3030-4 (Note.1) (Note.2)

www.kexin.com.cn2 Dio des Bridge Rectifiers SBR05M100BLP ■ Typical Characterisitics 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0.5 1 1.5 I , AVERAGE FORWARD CURRENT (A) Fig. 1 Forward Power Dissipation F(AV) P , POWER DISSIPATION (W)D 0 100 200 300 400 500 600 700 800 900 Fig. 2 Typical Forward Characteristics -V , INSTANTANEOUS FORWARD VOLTAGE (mV)F 0.01 0.1 100 1,000 -I , INSTANTANEOUS FORWARD CURRENT (mA)F T = 25°CA T = 85°CA T = 125°CA 0.01 0.1 100 1,000 0 10 20 30 40 50 60 70 80 90 100 Fig. 3 Typical Reverse Characteristics -V , INSTANTANEOUS REVERSE VOLTAGE (V)R -I , INSTANTANEOUS REVERSE CURRENT (µA)R T = 25°CA T = 85°CA T = 125°CA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (°C) Fig. 4 Forward Current Derating Curve A I , AVERAGE FORWARD CURRENT (A)F(AV) Per Diode Per Diode 100 125 175 0 10 20 30 40 50 60 70 80 90 100 V , DC REVERSE VOLTAGE (V) Fig. 5 Operating Temperature Derating R T , DERATED AMBIENT TEMPERATURE (°C)A 110 150

www.kexin.com.cn 3 Diod es Package Outline Dimensions DFN3030-4 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 - - 0.15 b 0.35 0.45 0.40 D 2.90 3.10 3.00 D1 1.075 1.275 1.175 D2 0.925 1.125 1.025 D3 1.075 1.275 1.175 E 2.90 3.10 3.00 e - - 1.30 E1 0.615 0.815 0.715 E2 1.78 1.98 1.88 E3 0.715 0.915 0.815 H 0.05 0.15 0.10 I 0.20 0.30 0.25 J 0.185 0.285 0.235 K 0.065 0.165 0.115 L 0.30 0.60 0.45 M 0.05 0.15 0.10 Z - - 0.65 All Dimensions in mm E E3 D3 L D E1 D1 Side View Bottom View e bZ H M I K A J DFN3030-4 Suggested Pad Layout Dimensions Value (in mm) C 1.300 G1 0.100 G2 0.150 G3 0.830 G4 0.115 G5 0.135 G6 0.170 G7 0.500 G8 0.500 R 0.150 X 0.500 X1 1.375 X2 1.225 X3 1.175 Y 1.980 Y1 1.015 Y2 0.715 Y3 0.650 Y X (4x) C Y3 (2x) G1 G3 R G7 G8