SBP735 DAESAN | Alldatasheet

Document overview

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Technical content

Features

Maximum Ratings and Electrical Characteristics Notes: (1) Pulse test: 300¥ìS pulse width, 1% duty cycle (2) Thermal resistance from junction to case

  • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0
  • Metal silicon junction, majority carrier conduction
  • Guard ring for overvoltage protection
  • Low power loss, high efficiency
  • High current capability, Low forward voltage drop
  • Single rectifier construction
  • High surge capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
  • High temperature soldering guaranteed : 250¡É/10 seconds, 0.25"(6.35mm) from case
  • Case : JEDEC ITO-220A molded plastic body
  • Terminals : Lead solderable per MIL-STD-750, Method 2026
  • Polarity : As marked
  • Mounting Position : Any
  • Weight : 0.08 ounce, 2.24 gram (Ratings at 25¡É ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%) Symbols SBP735 SBP750 Units Maximum repetitive peak reverse voltage VRRM 35 45 50 Volts Maximum RMS voltage VRMS 0.65 0.75 Maximum DC blocking voltage VDC Volts Maximum average forward rectified current (see Fig. 1) I(AV) 7.5 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method)

150.0 Amps

Maximum instantaneous forward voltage at 7.5A (Note 1) VF 1.0 Volts TA=25¡É Maximum instantaneous reverse current at rated DC blocking voltage (Note1) TA=125¡É mA Typical thermal resistance ¡É/W Operating junction temperature range -65 to +150 ¡É IR IFSM TJ Volts SBP745 25 32 35 35 45 50 Storage temperature range TSTG -65 to +150 ¡É SBP760 R¥èJC 5.0(Note 2) Repetitive peak forward current(square wavr, 20KHZ) at TC=105¡É IFRM 15.0 Amps Dimensions in inches and (millimeters) ITO-220A 5.08 13Min 3.7 0.2 0.7 0.2 1.3 0.2 2.7 0.2 15 0.3 10 0.5 3.2 6.4 0.1 2.7 4.5 0.2 0.5 2.4 ++PIN 1 PIN 1 PIN 2 PIN 2 CASE CASE CasePositive Case Negative Suffix"R"

FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES LEAD TEMPERATURE (¡É) 0 15010050 RESISTIVE OR INDUCTIVE LOAD 6.0 8.0 4.0 2.0 ¦¡¦¡ SBP735--SBP745 - - - SBP750&SBP760 INSTANTANEOUS FORWARD CURRENT (AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) PULSE WIDTH=300§Á 1% DUTY CYCLE 0.01 0.1 FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS TJ=25¡É TJ=125¡É ¦¡¦¡ SBP735--SBP745 - - - SBP750&SBP760 REVERSE VOLTAGE. VOLTS JUNCTION CAPACITANCE (pF) 0.1 100101 FIG.5-TYPICAL JUNCTION CAPACITANCE TJ=25¡É f=1.0MHz Vsig=50mVp-p 4000 1000 100 ¦¡¦¡ SBP735--SBP745 - - - SBP750&SBP760 FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT (AMPERES) NUMBER OF CYCLES AT 60Hz 1 10010 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 125 100 150 175 FIG.4-TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) 0 10080604020 TJ=75¡É TJ=25¡É TJ=125¡É 0.001 0.1 0.01 ¦¡¦¡ SBP735--SBP745 - - - SBP750&SBP760 FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE T, PULSE DURATION, sec. TRANSIENT THERMAL IMPEDANCE,¡É/ W 0.01 1001010.1 100 0.1 RATINGS AND CHARACTERISTIC CURVES SBP735 THRU SBP760