SBP2020 DAESAN | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Plastic Package has Underwriters Laboratory Flammability Classification 94V-0
- Metal silicon junction, majority carrier conduction
- Guard ring for overvoltage protection
- Low power loss, high efficiency
- High current capability, Low forward voltage drop
- High surge capability
- For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
- Dual rectifier construction
- High temperature soldering guaranteed: 250¡É/10 seconds, 0.25" (6.35mm) from case
- Case : JEDEC TO-220 molded plastic body
- Terminals : Lead solderable per MIL-STD-750, Method 2026
- Polarity : As marked. No suffix indicates Common Cathode, suffix "A" indicates Common Anode
- Mounting Position : Any
- Weight : 0.08ounce, 2.24 grams Symbols SBP
2030 Units
Maximum repetitive peak reverse voltage VRRM 20 30 Volts Maximum RMS voltage VRMS 0.60 0.900.75 Maximum DC blocking voltage VDC Volts Maximum average forward rectified current at Tc=105¡É I(AV) 20.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 150.0 125.0 Amps Maximum instantaneous forward voltage at 10A (Note 1) VF 1.0 Volts TA=25¡ÉMaximum instantaneous reverse current at rated DC blocking voltage (Note1) TA=100¡É mA Typical thermal resistance (Note 2) ¡É/W Operating junction temperature range ¡É IR IFSM TJ Volts SBP 2020 14 21 20 30 Storage temperature range TSTG -50 to +125 -65 to +150 ¡É SBP 2040 SBP 2060 R¥èJC 3.5 100.0 SBP 2050 SBP 2080 100 SBP 20100 100 Dimensions in inches and (millimeters) ITO-220 2.54 13Min +PIN 1 PIN 1 PIN 3 PIN 3 PIN 2 PIN 2 CASE CASE Positive CT Suffix "C" Negative CT Suffix "A" 0.2 3.7 0.2 0.7 0.2 2.54 0.2 1.3 0.2 2.7 0.2 15 0.3 10 0.5 3.2 0.2 0.1 6.4 0.1 2.7 0.2 4.5 0.2 0.5 0.2 2.4 0.2
RATINGS AND CHARACTERISTIC CURVES SBP2020 THRU SBP20100 FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE 0.1 1.0 1.0 AVERAGE FORWARD CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT FIG.4-TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE,(V) JUNCTION CAPACITANCE,(pF) INSTANTANEOUS FORWARD CURRENT,(A) FORWARD VOLTAGE,(V) Pulse Width 300us 1% Duty Cycle 2000 2400 2800 1600 1200 800 400 .01 .05 .1 .5 1 5 10 50 100 5.0 1.0 100 FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE LEAKAGE CURRENT, (mA) 0 20 40 60 80 100 120 140 .01 o Tj=75 C SBP2020-SBP2060 SBP2080-SBP20100 SBP2050-SBP2060 SBP2020-SBP2040 SBP2050~SBP2060 SBP2020-SBP2040 o Tj=25 C 100 150 250 200 NUMBER OF CYCLES AT 60Hz 1 10 5 50 100 o Tj=25 C 8.3ms Single Half Sine Wave JEDEC method PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) 0 20 40 60 80 100 120 140 160 180 200 o CASE TEMPERATURE,( C) FIG.2-TYPICAL FORWARD CHARACTERISTICS PEAK FORWARD SURGE CURRENT,(A) SBP2080-SBP20100 SBP2060~SBP20100 SBP2020-SBP2050 SBP2080~SBP20100 o Tj=25 C