SBP1535 DAESAN | Alldatasheet

Document overview

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  • PDF pages: 2

Technical content

Features

  • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0
  • Metal silicon junction, majority carrier conduction
  • Guard ring for overvoltage protection
  • Low power loss, high efficiency
  • High current capability, Low forward voltage drop
  • High surge capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
  • Dual rectifier construction
  • High temperature soldering guaranteed : 250℃/10 seconds, 0.25" (6.35mm) from case
  • Case : JEDEC ITO-220 molded plastic body
  • Terminals : Lead solderable per MIL-STD-750, Method 2026
  • Polarity : As marked. No suffix indicates Common Cathode, suffix "A" indicates Common Anode
  • Mounting Position : Any
  • Weight : 0.08 ounce, 2.24 grams Symbols SBP1545 Units Maximum repetitive peak reverse voltage VRRM Volts Maximum RMS voltage VRMS 0.65 0.75 Maximum DC blocking voltage VDC Volts Maximum average forward rectified current at Tc=105℃ per diode/per device I(AV) 7.5 15.0 Amps Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) 150.0 Amps Maximum instantaneous forward voltage at 7.5A (Note 1) VF 1.0 Volts TA=25℃ Maximum instantaneous reverse current at rated DC blocking voltage (Note1) TA=125℃ mA Typical thermal resistance (Note 2) ℃/W Operating junction temperature range IR IFSM TJ Volts SBP1535 Repetitive peak forward current(square wavr, 20KHZ) at Tc=105℃ per diode Storage temperature range TSTG -65 to +150 -65 to +175 SBP1550 SBP1560 RθJC 2.5 15.0 Amps IFRM Dimensions in inches and (millimeters) ITO-220 2.54 13Min PIN 1 PIN 1 PIN 3 PIN 3 PIN 2 PIN 2 CASE CASE Positive CT Suffix "C" Negative CT Suffix "A" 0.2 3.7 0.2 0.7 0.2 2.54 0.2 1.3 0.2 2.7 0.2 15 0.3 10 0.5 3.2 0.2 0.1 6.4 0.1 2.7 0.2 4.5 0.2 0.5 0.2 2.4 0.2

FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES LEAD TEMPERATURE (℃) RESISTIVE OR INDUCTIVE LOAD 150 100 TJ=25℃ PULSE WIDTH=300㎲ 1% DUTY CYCLE TJ=125℃ ── SBP1535-SBP1545 - - - SBP1550-SBP1560 INSTANTANEOUS FORWARD CURRENT (AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.01 0.1 FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0.1 1.2 1.0 0.8 0.6 0.2 0.5 1.1 0.9 0.7 0.3 REVERSE VOLTAGE. VOLTS JUNCTION CAPACITANCE (pF) 0.1 100 FIG.5-TYPICAL JUNCTION CAPACITANCE TJ=25℃ f=1.0MHz Vsig=50mVp-p 4000 1000 100 ── SBP1535-SBP1545 - - - SBP1550-SBP1560 FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT (AMPERES) NUMBER OF CYCLES AT 60Hz 100 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 100 175 125 150 TJ=75℃ TJ=25℃ TJ=125℃ FIG.4-TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) 100 0.001 0.1 0.01 ── SBP1535-SBP1545 - - - SBP1550-SBP1560 FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE T, PULSE DURATION, sec. TRANSIENT THERMAL IMPEDANCE,℃/ W 0.01 100 0.1 100 0.1 RATINGS AND CHARACTERISTIC CURVES SBP1535 THRU SBP1560