SBP1020 DAESAN | Alldatasheet

Document overview

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  • PDF pages: 2

Technical content

Features

  • Plastic Package has Underwriters Laboratory Flammability Classification 94V-0
  • Metal silicon junction, majority carrier conduction
  • Guard ring for overvoltage protection
  • Low power loss, high efficiency
  • High current capability, Low forward voltage drop
  • High surge capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
  • Dual rectifier construction
  • High temperature soldering guaranteed : 250¡É/10 seconds, 0.25" (6.35mm) from case
  • Case : JEDEC ITO-220 molded plastic body
  • Terminals : Lead solderable per MIL-STD-750, Method 2026
  • Polarity : As marked. No suffix indicates Common Cathode, suffix "A" indicates Common Anode
  • Mounting Position : Any
  • Weight : 0.08 ounce, 2.24 gram Symbols SBP 1020 SBP

1040 Units

Maximum repetitive peak reverse voltage VRRM 20 30 40 Volts Maximum RMS voltage VRMS 0.65 0.75 Maximum DC blocking voltage VDC Volts Maximum average forward rectified current (see Fig. 1) I(AV) 10.0 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method)

150.0 Amps

Maximum instantaneous forward voltage at 5.0A (Note 1) VF 1.0 Volts TA=25¡É Maximum instantaneous reverse current at rated DC blocking voltage (Note1) TA=100¡É mA Typical thermal resistance (Note 2) ¡É/W Operating junction temperature range -65 to +125 ¡É IR IFSM TJ Volts SBP 1030 14 21 28 20 30 40 Repetitive peak forward current(square wavr, 20KHZ) at Tc=105¡É Storage temperature range TSTG -65 to +150 -65 to +150 ¡É 0.85 SBP 1050 SBP 1080 50 60 80 SBP 1060 35 42 56 50 60 80 SBP 10100 100 100 R¥èJC 5.0

20.0 Amps

0.80 Dimensions in inches and (millimeters) ITO-220 2.54 13Min +PIN 1 PIN 1 PIN 3 PIN 3 PIN 2 PIN 2 CASE CASE Positive CT Suffix "C" Negative CT Suffix "A" 0.2 3.7 0.2 0.7 0.2 2.54 0.2 1.3 0.2 2.7 0.2 15 0.3 10 0.5 3.2 0.2 0.1 6.4 0.1 2.7 0.2 4.5 0.2 0.5 0.2 2.4 0.2

FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES LEAD TEMPERATURE (¡É) RESISTIVE OR INDUCTIVE LOAD 0.375"(9.5MM) LEAD LENGTH ¦¡¦¡ SBP1020-SBP1040 - - - SBP1050-SBP10100 3.0 4.0 2.0 1.0 5.0 0 15010060 804020 120 TJ=25¡É TJ=125¡É PULSE WIDTH=300§Á 1% DUTY CYCLE TJ=150¡É INSTANTANEOUS FORWARD CURRENT (AMPERES) INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.01 0.1 FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS ¦¡¦¡ SBP1020-SBP1040 - - - SBP1050-SBP10100 REVERSE VOLTAGE. VOLTS JUNCTION CAPACITANCE (pF) 0.1 100101 FIG.5-TYPICAL JUNCTION CAPACITANCE TJ=25¡É f=1.0MHz Vsig=50mVp-p 4000 1000 100 ¦¡¦¡ SBP1020-SBP1040 - - - SBP1050-SBP10100 FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT (AMPERES) NUMBER OF CYCLES AT 60Hz 1 10010 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 100 125 150 TJ=75¡É TJ=25¡É TJ=125¡É FIG.4-TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) 0 10080604020 0.001 0.1 0.01 ¦¡¦¡ SBP1020-SBP1040 - - - SBP1050-SBP10100 FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE T, PULSE DURATION, sec. TRANSIENT THERMAL IMPEDANCE,¡É/ W 0.01 1001010.1 100 0.1 RATINGS AND CHARACTERISTIC CURVES SBP1020 THRU SBP10100