SBN13002A1 WINSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Features
◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value Units VCES Collector-Emitter Voltage VBE = 0 600 V VCEO Collector-Emitter Voltage IB = 0 400 V VEBO Emitter-Base Voltage IC = 0 9.0 V IC Collector Current 1.0 A ICP Collector pulse Current 2.0 A IB Base Current - A IBM Base Peak Current tP = 5ms - A PC Total Dissipation at Tc = 25℃ 10 W Total Dissipation at Ta = 25℃ 0.75 TJ Operation Junction Temperature - 40 ~ 150 ℃ TSTG Storage Temperature - 40 ~ 150 ℃ Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink)
Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions Value Units Min Typ Max BVCBO Collector-Base Breakdown Voltage Ic=0.5mA,Ie=0 600 V BVCEO Collector-Emitter Breakdown Voltage Ic=10mA,Ib=0 400 - - V VCE(sat) Collector-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.6 V VBE(sat) Base-Emitter Saturation Voltage Ic=200mA,Ib=100mA - - 1.2 V ICBO Collector-Base Cutoff Current Vcb=550V,Ie=0mA - - 10 μA ICEO Collector-Emitter Cutoff Current Vce=400V,Ib=0mA - - 20 μA IEBO Emitter- Base Cutoff Current Veb=9V,Ic=0mA - - 20 μA hFE DC Current Gain Vce=20V,Ic=20mA Vce=5V, Ic=1mA ts tf Storage Time Fall Time VCC=250V IC=5 IB IB1=- IB2=0.04A 0.8 ㎲ Note: Pulse Test : Pulse width 300, Duty cycle 2%
Fig. 1 DC Current Gain Fig. 2 Saturation Voltage Fig. 3 Power Derating Fig. 4 Safe Operation Area Fig. 5 Static Characteristics
Resistive Load Switching Test Circuit Inductive Load Switching & RBSOA Test Circuit
1.27 0.050 1.27 0.050 0.050