SBM540 DIODES | Alldatasheet
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Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. /c183Case: POWERMITE/c2263, Molded Plastic /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Moisture sensitivity: Level 1 per J-STD-020A /c183Polarity: See Diagram /c183Marking: Type Number, See also Sheet 3 /c183Weight: 0.072 grams (approx.) /c183Ordering Information, See Sheet 3 Mechanical Data B C D E G J H K L M A P PIN 1 PIN 2 PIN 3, BOTTOMSIDE HEAT SINK C Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Rectified Output Current (see also Figure 5) IO 5A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 90/c176C IFSM 100 A Typical Thermal Resistance Junction to Soldering Point R/c113JS 3.2 /c176C/W Operating Temperature Range Tj -55 to +125 /c176C Storage Temperature Range TSTG -55 to +150 °C /c183Guard Ring Die Construction for Transient Protection /c183Low Power Loss, High Efficiency /c183Low Forward Voltage Drop /c183For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications /c183Plastic Material: UL Flammability Classification Rating 94V-0 TCUDORPWEN Maximum Ratings @ TA = 25/c176C unless otherwise specified Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 1) V(BR)R 40 /c190/c190 V IR = 0.5mA Forward Voltage (Note 1) VFM /c190 /c190 /c190 /c190 0.48 0.45 0.59 0.56 0.52 /c190 /c190 /c190 V I F = 5A, TS = 25/c176C IF = 5A, TS = 125/c176C IF = 10A, TS = 25/c176C IF = 10A, TS = 125/c176C Reverse Current (Note 1) IRM /c190 /c190 0.05 2.5 0.5 20 mA TS = 25/c176C, VR = 40V TS = 100/c176C, VR = 40V Total Capacitance CT /c190 250 /c190 pF f = 1.0MHz, VR = 4.0V DC POWERMITE/c2263 Dim Min Max A 4.03 4.09 B 6.40 6.61 C .889 NOM D 1.83 NOM E 1.10 1.14 G .178 NOM H 5.01 5.17 J 4.37 4.43 K .178 NOM L .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30297 Rev. 3 - 2 2 of 3 SBM540 www.diodes.com 0.01 0.1 1.0 100 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V)F Fig. 1 T ypical Forward Characteristics 0.2 0.4 0.6 0.8 T = 2 5°CJ T = 1 0 0°CJ 0 5 10 15 20 25 30 35 40 I , INSTANTANEOUS REVERSE CURRENT (mA)R V , INSTANTANEOUS REVERSE VOLTAGE (V)R Fig. 2 T ypical Reverse Characteristics 100 1.0 0.1 0.01 0.001 T = 25°CJ T = 75°CJ T = 100°CJ T = 125°CJ 100 125 11 0 1 0 0 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Forward Sur ge Current Single Half-Sine-Wave (JEDEC Method) T = 90°CC TCUDORPWEN 100 1000 0.1 1 10 100 C, T OTAL CAPACITANCE (pF)T V , REVERSE VOLTAGE (V)R Fig. 4 Typical Total Capacitance vs. Reverse Voltage T = 25°Cj f= 1 M H z
DS30297 Rev. 3 - 2 3 of 3 SBM540 www.diodes.com 1.5 3.0 4.5 7.5 6.0 0 25 50 75 100 125 150 I , DC FORWARD CURRENT (A)F T , AMBIENT TEMPERATURE (°C)A Fig. 5 DC Forward Current Derating Note 1 Note 2 Note 3 0.5 1.5 2.5 3.5 0 1 32 4 5 6 7 8 9 10 P , AVERAGE FORWARD POWER DISSIPATION (W)F(AV) I , AVERAGE FORWARD CURRENT (A)F(AV) Fig. 6 Forward Power Dissipation T = 125°Cj dc Notes: 1. T A = TSOLDERING POINT, R/c113JS = 3.2/c176C/W, R/c113SA = 0/c176C/W. 2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. R/c113JA in range of 15-30°C/W. 3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R/c113JA in range of 60-75°C/W. TCUDORPWEN Ordering Information (Note 4) Device Packaging Shipping SBM540-13 POWERMITE/c2263 5000/Tape & Reel SBM540 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 W W=W e e kc o d e0 1t o5 2 (K) = Factory DesignatorYYWW(K) SBM540 Marking Information POWERMITE is a registered trademark of Microsemi Corporation.