SBM340 DIODES | Alldatasheet

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Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. /c183Case: POWERMITE/c2263, Molded Plastic /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Polarity: See Diagram /c183Marking: Type Number /c183Weight: 0.072 grams (approx.) Mechanical Data B C D E G J H K L M A P PIN 1 PIN 2 PIN 3, BOTTOMSIDE HEAT SINK C Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Rectified Output Current (See also Figure 5) IO 3A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 100/c176C IFSM 50 A Typical Thermal Resistance Junction to Soldering Point R/c113JS 3.4 /c176C/W Operating Temperature Range Tj -55 to +125 /c176C Storage Temperature Range TSTG -55 to +150 °C /c183Guard Ring Die Construction for Transient Protection /c183Low Power Loss, High Efficiency /c183Low Forward Voltage Drop /c183For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications /c183Plastic Material: UL Flammability Classification Rating 94V-0 TCUDORPWEN Maximum Ratings @ TA = 25/c176C unless otherwise specified Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 1) V(BR)R 40 /c190/c190 V IR = 0.5mA Forward Voltage (Note 1) VFM /c190 0.46 0.40 0.57 0.54 0.50 0.44 0.61 0.58 V I F = 3A, Tj = 25/c176C IF = 3A, Tj = 125/c176C IF = 6A, Tj = 25/c176C IF = 6A, Tj = 125/c176C Reverse Current (Note 1) IRM /c190 15 /c190 500 /c109A mA Tj = 25/c176C, VR = 40V Tj = 100/c176C, VR = 40V Total Capacitance CT /c190 180 /c190 pF f = 1.0MHz, VR = 4.0V DC POWERMITE/c2263 Dim Min Max A 4.03 4.09 B 6.40 6.61 C .889 NOM D 1.83 NOM E 1.10 1.14 G .178 NOM H 5.01 5.17 J 4.37 4.43 K .178 NOM L .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm Notes: 1. Short duration test pulse used to minimize self-heating effect.

DS30362 Rev. 2 - 2 2 of 3 SBM340 www.diodes.com TCUDORPWEN 100 0.1 0.01 1000 10,000 0 20 30 40 V , INSTANTANEOUS REVERSE VOLTAGE (V)R Fig.2 T ypical Reverse Characteristics T = + 2 5°CJ T = + 1 2 5°CJ T = - 2 5°CJ T= + 7 5 °CJ 11 0 1 0 0 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) T = 100°CC 0.1 1.0 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V)F Fig.1 Typical Forward Characteristics T = + 2 5°CJ T= + 7 5°CJ T = + 1 2 5°CJ T = - 2 5°CJ 100 1000 0.1 1 10 100 C , TOTAL CAPACITANCE (pF)T V , REVERSE VOLTAGE (V)R Fig.4 Typical Capacitance vs. Reverse Voltage f = 1 MHz T = 2 5 ° CJ

DS30362 Rev. 2 - 2 3 of 3 SBM340 www.diodes.com TCUDORPWEN 0 1 2 3 4 5 6 7 P , AVERAGE FORWARD POWER DISSIPATION (W )F(AV) I , AVERAGE FORWARD CURRENT (A)F(AV) Fig. 6 Forward Power Dissipation T = 125°Cj NOTE 2 NOTE 3 0.5 1.5 2.5 3.5 25 50 75 100 125 150 I , DC FORWARD CURRENT (A)F T , AMBIENT TEMPERATURE (°C)A Fig. 5 DC Forward Current Derating Note 1 Note 2 Note 3 SBM340 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last digit of year ex: 2 for 2002 WW = Week code 01 to 52YYWW SBM340 Marking Information Notes: 1. T A = TSOLDERING POINT, R/c113JS = 3.4/c176C/W, R/c113SA = 0/c176C/W. 2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. R/c113JA in range of 20-40°C/W. 3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R/c113JA in range of 95-115°C/W. Device Packaging Shipping SBM340-13 POWERMITE/c2263 5000/Tape & Reel

Ordering Information

POWERMITE is a registered trademark of Microsemi Corporation. (Note 4)