SBM1040 DIODES | Alldatasheet

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Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. /c183Case: POWERMITE/c2263, Molded Plastic /c183Terminals: Solderable per MIL-STD-202, Method 208 /c183Polarity: See Diagram /c183Weight: 0.072 grams (approx.) /c183Marking information: See sheet 3 Mechanical Data B C D E G J H K L M A P PIN 1 PIN 2 PIN 3, BOTTOMSIDE HEAT SINK C Characteristic Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Rectified Output Current (see also Figure 4) IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @TC = 88/c176C IFSM 150 A Typical Thermal Resistance Junction to Soldering Point R/c113JS 2.5 /c176C/W Operating Temperature Range Tj -65 to +150 /c176C Storage Temperature Range TSTG -65 to +150 °C /c183Guard Ring Die Construction for Transient Protection /c183Low Power Loss, High Efficiency /c183High Surge Capability /c183High Max Junction Temperature Rating /c183Very Low Forward Voltage Drop /c183Very Low Leakage Current /c183For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications /c183Plastic Material: UL Flammability Classification Rating 94V-0 NEW PRODUCT Maximum Ratings @ TA = 25/c176C unless otherwise specified Electrical Characteristics @ TA = 25/c176C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 1) V(BR)R 40 /c190/c190 V IR = 1mA Forward Voltage (Note 1) VFM /c190 /c190 /c190 0.45 /c190 0.47 0.49 0.41 0.51 V I F = 8A, TS = 25/c176C IF = 8A, TS = 125/c176C IF = 10A, TS = 25/c176C Peak Reverse Current (Note 1) IRM /c190 /c190 0.1 12.5 0.3 25 mA TS = 25/c176C, VR = 35V TS = 100/c176C, VR = 35V Junction Capacitance Cj /c190 700 /c190 pF f = 1.0MHz, VR = 4.0V DC POWERMITE/c2263 Dim Min Max A 4.03 4.09 B 6.40 6.61 C .889 NOM D 1.83 NOM E 1.10 1.14 G .178 NOM H 5.01 5.17 J 4.37 4.43 K .178 NOM L .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm Notes: 1. Short duration test pulse used to minimize self-heating effect.

DS30255 Rev. F-2 2 of 3 SBM1040 0 100 200 300 400 600500 I , INSTANTANE OUS F ORWARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Typical Forward Characteristics F 0.1 0.01 0.001 0.0001 100 T = +25 CA /c176 T = +75 CA /c176 T = +150 CA /c176 0 5 10 15 20 25 30 4035I , INSTANTANE OUS REVERSE CURRENT ( R m V , INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics R T = +25ºCA T = +150ºCA T = +100ºCA T = +75ºCA 100 0.1 0.01 1000 100 1000 10,000 01 5 10 25 30 3520 40 C , JUNCTI ON CAP ACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig. 3 Typical Junction Capacitance vs. Reverse Voltage R f = 1MHz NEW PRODUCT 2.5 5.0 7.5 12.5 10.0 0 25 50 75 100 125 150 I , DC FOR WARD CURRENT (A) F T , AMBIENT TEMPERATURE (°C) Fig. 4 DC Forward Current Derating A Note 1 Note 2 Note 3 Notes: 1. T A = TSOLDERING POINT, R/c113JS = 2.5/c176C/W, R/c113SA = 0/c176C/W. 2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. R/c113JA in range of 15-30°C/W. 3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R/c113JA in range of 60-75°C/W.

DS30255 Rev. F-2 3 of 3 SBM1040 FORWARD POWER DISSIPATION (W F(AV) I , AVERAGE FORWARD CURRENT (A) Fig. 5 Forward Power Dissipation F(AV) T = 150°Cj dc NEW PRODUCT Ordering Information (Note 3) Device Packaging Shipping SBM1040-13 POWERMITE/c2263 5000/Tape & Reel Marking Information SBM1040 = Product type marking code = Manufacturers’ code marking YYWW = Date code marking YY = Last two digits of year ex: 02 for 2002 WW = Week code 01 to 52YYWW SBM1040 Notes: 1. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad dimensions 0.25” x 1.0”. R/c113JA in range of 15-30°C/W. 2. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R/c113JA in range of 60-75°C/W. POWERMITE is a registered trademark of MicroSemi Corporation.