SBLF3060CT SUNMATE | Alldatasheet
Document overview
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Technical content
RATINGS SYMBOL SBLF3060CT UNIT Maximum repeve reverse voltage V RRM V Maximum RMS voltage V RMS V Maximum average forward current per device I AV A per diode 15 Peak forward surge current,8.3ms single half sine-wave superimposed on rated load I FSM 300 A Typical thermal resistance per diode(Note 1) R θ-JC 4.5 ℃/W Operang juncon temperature range T J -55 to +150 Storage temperature range T STG -55 to +150 Maximum DC blocking voltage 60 Notes: 1. Thermal resistance from junction to case. V DC V T A = 25/c176C unless otherwise specified Maximum Ratings 1 of 2 www.sunmate.tw LOW VF SCHOTTKY BARRIER RECTIFIERS SBLF3060CT CURRENT: 30A VOLTAGE RANGE: 60V Ultra low vf High efficiencty operation Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Low stored charge majority carrier conduction Feaures Ø 2.3 ± 51.0 10.16± 0.2 3.3 51.0 58.51 3.0 1.31 3.0 1.3± 0.2 0.8± 0.2 2.54± 0.1 0.5± 0.1 2.35± 0.2 4.7± 0.2 2.55± 0.2 86.6 2.0 （0.7） ITO-220AB PIN1 PIN3PIN2 PIN 1 PIN 3 PIN 2 & (case) Leads: Polarity: Mounting torque: Terminals: Weight: as marked Solderable per mil-std-202, Method 208 5 in-lbs maximum Puretin plated Circuit figure: Common cathode Mechanical Data ITO-220AB 1.70 grams
T A = 25/c176C unless otherwise specified
Electrical Characteristics
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE CASE TEMPERATURE, ( C ) 0 20 40 60 80 100 120 140 160 180 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT )A( ,TNERRUC EGRUS DRAWROF KAEP NUMBER OF CYCLES AT 60Hz 500 400 300 200 100 AVERAGE FORWARD CURRENT, (A) 1 5 10 20 50 100 T J =25 C° 8.3ms Single Half Sine Wave JEDEC method FIG. 3 - TYPICAL REVERSE CHARACTERISTICS )Am( ,TNERRUC ESREVER SUOENATNATSNI PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS )A( ,TNERRUC DRAWROF SUOENATNATSNI INSTANTANEOUS FORWARD VOLTAGE, (V) 100 0 20 40 60 80 100 120 T J=2 5 C° 0.1 100 .01 T J=125 C° T J =125 C° T J =25 C° T J =75 C° T J=75 C° per diode PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Breakdown voltage per diode V BR I R =0.5mA 60 - - V Instantaneous forward voltage per diode V F V I F =15A T J =25 º C - V I F =15A T J =125 º C - Reverse current per diode I R V R =60V T J =25 º C - 150 uA T J =125 º C - mA 0.60 - 0.55 0.55 2 of 2 www.sunmate.tw