SBLF1030 DSK | Alldatasheet
Document overview
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Technical content
16.5± 0.3 10.2± 0.2 15.2± 0.5 4.0± 0.3 13.5± 0.5 5.0± 0.1 1.4± 0.1 0.6± 0.1 4.5± 0.2 3.1 +0.2 -0.1 φ 3 .3± 0.1 ?3 . 2 ±0 . 2 8.2± 0.2 2.6± 0.2 0.6± 0.1
FEATURES
Metal-Semiconductor junction with guard ring ITO-220AC Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC ITO-220AC,molded plastic Terminals: Solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight: 0.056ounces,1.587 gram Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SBLF SBLF SBLF SBLF SBLF SBLF SBLF SBLF 1030 1035 1040 1045 1050 1060 1080 10100 UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current TC=110 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load T J =125 Maximum instantaneous forw ard voltage @ 10 A V F V Maximum reverse current @T C =25 at rated DC blocking voltage @T C =100 Typical thermal resistance (Note1) R θJC Operating junction temperature range T J Storage temperature range T STG Note: 1. Thermal resistance junction to case. -55--- + 150 30 35 40 45 50 60 80 100 I FSM 30 35 40 45 50 60 80 100 21 25 28 32 35 42 56 70 mA I R 1.0 A -55--- + 150 5.0 0.60 0.75 0.85 250 SBLF1030 - - - SBLF10100 A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
T J =25 Pul se wi dth=300 s 1% D uty C ycle 1 0 0 2 0 0 SBLF1030-SBLF1045 SBLF1050-SBLF1060 SBLF1080-SBLF10100 04 0 6 0 20 100 120 140 80 T C =25 0.1 1.0 .01 Tc=100 25 50 75 100 125 150 1 100 250 100 150 200 8.3ms Single Half Sine Wave T J =125 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INST ANT ANEOUS FORWARD VOLT AGE, VOLT S NUMBER OF CYCLES AT 60H Z CASE TEMPERATURE, INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, FIG.2 -- FORWARD DERATING CURVE AMPERES MILLIAMPERES PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.1 -- PEAK FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT, SBLF1030 - - - SBLF10100 www.diode.kr Diode Semiconductor Korea