SBL830 DSK | Alldatasheet
Document overview
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Technical content
10.2± 0.2 2.8± 0.1 19.0± 0.5 PIN 3.5± 0.3 0.9± 0.1 5.0± 0.1 13.8± 0.5 2.6± 0.2 0.5± 0.1 8.9± 0.2 1.4± 0.2 4.5± 0.2 φ 3 .8 ± 0 . 1 5
FEATURES
Metal-Semiconductor junction with guard ring TO - 220AC Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC TO--220AC,molded plastic Terminals: Leads solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight: 0.069 ounces,1.96 gram Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SBL SBL SBL SBL SBL SBL SBL SBL SBL SBL 830 835 840 845 850 860 870 880 890 8100 UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current TC=95 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load T J =125 Maximum instantaneous forw ard voltage @ 8.0A V F V Maximum reverse current @T C =25 at rated DC blocking voltage @T C =100 Typical thermal resistance (Note1) R θJC Operating junction temperature range T J Storage temperature range T STG Note: 1. Thermal resistance junction to case. -55--- + 150 30 35 40 45 50 60 70 80 90 100 I FSM 30 35 40 45 50 60 70 80 90 100 21 25 28 32 35 42 49 56 63 70 mA I R 0.5 A -55--- + 150 6.9 0.55 0.70 0.85 200 SBL830---SBL8100 A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 --- 100 V CURRENT: 8.0 A The plastic material carries U/L recognition 94V-0 8.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Dimensions in millimeters Diode Semiconductor Korea www.diode.kr
T J =25 Pul se wi dth=300 s 1% D uty C ycle 1 0 0 2 0 0 SBL830-SBL845 SBL850-SBL860 SBL870-SBL8100 04 0 6 0 20 100 120 140 80 T C =25 .01 Tc=100 2.0 4.0 25 50 75 100 125 150 6.0 8.0 1 100 200 120 160 8.3ms Single Half Sine Wave T J =125 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS FORWARD VOLTAGE, VOLTS NUMBER OF CYCLES AT 60H Z CASE TEMPERATURE, INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, FIG.2 -- FORWARD DERATING CURVE AMPERES MILL AMPERES PERCENT OF RATED PEAK REVERSE VOLTAGE FIG.1 -- PEAK FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT, SBL830---SBL8100 www.diode.kr Diode Semiconductor Korea