SBL6030PT DSK | Alldatasheet
Document overview
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Technical content
15.8± 0.2 8.0± 0.2 6.5± 0.3 4.9± 0.25 21± 0.5 20.4± 0.4 PIN 2.2± 0.15 3.0± 0.1 5.4± 0.15 1.2± 0.15 0.6± 0.1 5.0± 0.15 2.0± 0.15 2.4± 0.2 φ3 . 6 ± 0 . 1 5 0.62 0.75 0.85
FEATURES
Position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. UNITS Maximum recurrent peak reverse voltage V RRM V Maximum RMS Voltage V RMS V Maximum DC blocking voltage V DC V Maximum average forw ard total device m rectified current @T C = 105°C I F(AV) A Peak forw ard surge current I FSM A Maximum forward voltage Maximum reverse current @T A =25 at rated DC blocking voltage @T A =100 Maximum thermal resistance (Note2) R θJC /W Operating junction temperature range T J Storage temperature range T STG m A 30 35 40 45 50 60 80 100 500 21 25 28 32 35 42 56 70 30 35 40 45 50 60 80 100 VOLTAGE RANGE: 30 - 100 V CURR ENT: 60 A Metal silicon junction, majority carrier conduction. Case:JEDEC TO-3P,molded p lastic body SCHOTTKY BARRIER RECTIFIER S High current capa city, low forward voltage d rop. NOTE: 1. Thermal resistance from junction to case. - 55 ---- + 150 - 55 ---- + 150 Terminals:Solderable per MIL-STD-750, 1 1 Method 2026 I R V F 1.4 TO-3P(TO-247AD) SBL6030PT - - - SBL60100PT SBL SBL SBL SBL SBL SBL SBL SBL 6030PT 6035PT 6040PT 6045PT 6050PT 6060PT 6080PT 60100PT Guard ring for over voltage p rotection. High surge capacity. For use in low voltage, high frequency inverters, free 111wheeling, and polarity protection applications. Polarity: As marked Weight: 0.223 ounce, 6.3 grams 200 V Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. Dimensions in millimeters 8.3ms single half sine-wave superimposed on rated load @ I F=30A,T C=25 ℃ Diode Semiconductor Korea www.diode.kr
1.2 100 1.0 SBL6030PT~SBL6045PT SBL6050PT~SBL6060PT SBL6080PT~SBL60100PT 100000 120 100 8040 20 10000 1000 100 1.0 60 1400 T A =100°C T A =25° C 100 1 100 500 200 300 400 8.3ms Single Half Sine Wave T J =125 25 50 75 100 125 150 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INSTANTANEOUS FORWARD VOLTAGE, VOLTS SBL6030PT - - - SBL60100PT NUMBER OF CYCLES AT 60H Z CASE TEMPERATURE, INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, FIG.2 -- FORWARD DERATING CURVE AMPERES MILLIAMPERES PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.1 -- PEAK FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT, www.diode.kr Diode Semiconductor Korea