SBL2030PT DIODES | Alldatasheet
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A B E G J L M N K S M H R D C QP* *2 Places TO-3P Dim Min Max A 3.20 3.50 B 4.59 5.16 C 20.80 21.30 D 19.70 20.20 E 2.10 2.40 G 0.51 0.76 H 15.90 16.40 J 1.70 2.70 K 3.10 /c1983.30 /c198 L 3.50 4.51 M 5.20 5.70 N 1.12 1.22 P 1.93 2.18 Q 2.97 3.22 R 11.70 12.80 S 4.30 Typical All Dimensions in mm Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified /c183Schottky Barrier Chip /c183Guard Ring Die Construction for Transient Protection /c183Low Power Loss, High Efficiency /c183High Surge Capability /c183High Current Capability and Low Forward Voltage Drop /c183For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application /c183Plastic Material - UL Flammability Classification 94V-0 Mechanical Data /c183Case: Molded Plastic /c183Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 /c183Polarity: As Marked on Body /c183Weight: 5.6 grams (approx) /c183Mounting Position: Any /c183Marking: Type Number Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SBL 2030PT SBL 2035PT SBL 2040PT SBL 2045PT SBL 2050PT SBL 2060PT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current (Note 1) @ T C = 100°C IO 20 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) I FSM 250 A Forward Voltage Drop @ I F =10A, TC = 25°C VFM 0.55 0.75 V Peak Reverse Current @T C = 25°C at Rated DC Blocking Voltage @ T C = 100°C IRM 1.0 50 mA Typical Junction Capacitance (Note 2) Cj 1100 pF Typical Thermal Resistance Junction to Case (Note 1) R/c113Jc 2.5 K/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
DS23047 Rev. B-2 2 of 2 SBL2030PT-SBL2060PT 0.1 1.0 100 I,INST ANT ANEOUS FOR W ARD CURRENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics per Element F T = 25°C Pulse width = 300 µs 2% duty cycle j SBL2050PT - SBL2060PT SBL2030PT - SBL20450PT 100 150 200 250 300 1 10 100 I ,PEAK FOR W ARD CURRENT (A) FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Maximum Non-Repetitive Sur ge Current 8.3 ms single half-sine-wave JEDEC method 100 1000 000 0.1 1.0 10 100 C ,CAP ACIT ANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance per Element R T = 25°C f = 1MHz j 0.01 0.1 1.0 100 0 40 80 120 I ,INST ANT ANEOUS REVERSE CURRENT (mA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 T ypical Reverse Characteristics per Element T = 100°Cj T = 75°Cj T = 25°Cj 0 50 100 150 I ,AVERAGE FOR W ARD CURRENT (A) T , CASE TEMPERATURE (°C) Fig. 1 Forward Current Deratin g Curve C