SBL1030CT_1 DIODES | Alldatasheet
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L M A N P D E K C B G 123 J HH P i n1+ P i n3+ P i n2- Case Maximum Ratings and Electrical Characteristics @ TA = 25/c176C unless otherwise specified /c183Schottky Barrier Chip /c183Guard Ring Die Construction for Transient Protection /c183Low Power Loss, High Efficiency /c183High Surge Capability /c183High Current Capability and Low Forward Voltage Drop /c183For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications /c183Lead Free Finish, RoHS Compliant (Note 3) Mechanical Data /c183Case: TO-220AB /c183Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 /c183Moisture Sensitivity: Level 1 per J-STD-020C /c183Polarity: As Marked on Body /c183Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208 /c183Marking: Type Number /c183Weight: 2.24 grams (approx.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SBL 1030CT SBL 1035CT SBL 1040CT SBL 1045CT SBL 1050CT SBL 1060CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 30 35 40 45 50 60 V RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V Average Rectified Output Current @ T C = 95/c176C (Note 1) IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) I FSM 175 A Forward Voltage Drop @ I F = 5.0A, TC = 25/c176C VFM 0.55 0.70 V Peak Reverse Current @ T C = 25/c176C at Rated DC Blocking Voltage @ T C = 125/c176C IRM 0.5 50 mA Typical Junction Capacitance (Note 2) Cj 450 pF Typical Thermal Resistance Junction to Case (Note 1) R/c113JC 5.5 °C/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 /c176C Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. TO-220AB Dim Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 H 2.40 2.70 J 0.69 0.93 K 3.54 3.78 L 4.07 4.82 M 1.15 1.39 N 0.30 0.50 P 2.04 2.79 All Dimensions in mm
DS23048 Rev. 4 - 2 2 of 3 SBL1030CT - SBL1060CT www.diodes.com 0.1 1.0 100 0.2 0.4 0.6 0.8 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics per Element F SBL1030CT - SBL10450CT SBL1050CT - SBL1060CT 100 150 200 250 300 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Sur ge Current 8.3ms single half-sine-wave JEDEC method 100 1000 4000 0.1 1.0 10 100 C , CAPACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance per Element R T= 2 5Cj ° 0.001 0.01 0.1 1.0 0 40 80 120 I , INSTANTANEOUS REVERSE CURRENT (mA)R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 T ypical Reverse Characteristics T= 1 2 5 CC ° T= 7 5 CC ° T= 2 5 CC ° 0 50 100 150 I , AVERAGE FORWARD CURRENT (A)(AV) T , CASE TEMPERATURE ( C) Fig. 1 Forward Current Deratin g Curve C °
DS23048 Rev. 4 - 2 3 of 3 SBL1030CT - SBL1060CT www.diodes.com (Note 4)Ordering Information Device Packaging Shipping SBL10xxCT* TO-220AB 50/Tube * xx = Device type, e.g. SBL1045CT