SBL1030CT DSK | Alldatasheet
Document overview
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Technical content
10.2± 0.2 φ 3.8± 0.15 2.8± 0.1 19.0± 0.5 PIN 3.5± 0.3 0.9± 0.1 2.5± 0.1 13.8± 0.5 2.6± 0.2 0.5± 0.1 8.9± 0.2 1.4± 0.2 4.5± 0.2 PIN 1 PIN 3 CASE PIN 2 Positive CT Negative CT Suffix "A" CASE PIN 2 PIN 3 PIN 1 PIN 1 PIN 3 CASE PIN 2Doubler Suffix "D" Dimensions in millimeters
FEATURES
Metal-Semiconductor junction with guard ring TO-220AB Epitaxial construction Low forward voltage drop,low switching losses High surge capability MECHANICAL DATA Case:JEDEC TO-220AB,molded plastic Terminals: Solderable per MIL- STD-750,Method 2026 Polarity: As marked Weight: 0.071ounce, 2.006 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. SBL SBL SBL SBL SBL SBL SBL SBL 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT 1080CT 10100CT UNITS Maximum recurrent peak reverse voltage V RRM V Max imum RMS v oltage V RMS V Max imum DC bloc king v oltage V DC V Maximum average forw ard rectified current TC=107 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load T J =125 Maximum instantaneous forw ard voltage @ 5.0A V F V Maximum reverse current @T C =25 at rated DC blocking voltage @T C =100 Typical thermal resistance (Note1) R θJC Operating junction temperature range T J Storage temperature range T STG Note: 1. Thermal resistance junction to case. -55--- + 150 30 35 40 45 50 60 80 100 I FSM 30 35 40 45 50 60 80 100 21 25 28 32 35 42 56 70 mA I R 0.5 A -55--- + 150 3.0 0.55 0.70 0.85 175 SBL1030CT - - - SBL10100CT A For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications I F(AV) SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 --- 100 V CURRENT: 10 A The plastic material carries U/L recognition 94V-0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Diode Semiconductor Korea www.diode.kr
T J =25 Pul se wi dth=300 s 1% D uty C ycle 1 0 0 2 0 0 SBL1030CT-SBL1045CT SBL1050CT-SBL1060CT SBL1080CT-SBL10100CT 04 0 6 0 20 100 120 140 80 T C =25 0.1 1.0 .01 Tc=100 25 50 75 100 125 150 1 100 200 120 160 8.3ms Single Half Sine Wave T J =125 AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTIC FIG.4 -- TYPICAL REVERSE CHARACTERISTIC INST ANT ANEOUS FORWARD VOLT AGE, VOLT S SBL1030CT - - - SBL10100CT NUMBER OF CYCLES AT 60H Z CASE TEMPERATURE, INSTANTANEOUS FORWARD CURRENT, PEAK FORWARD SURGE CURRENT, FIG.2 -- FORWARD DERATING CURVE AMPERES MILLIAMPERES PERCENT OF RATED PEAK REVERSE VOLTAGE FIG.1 -- PEAK FORWARD SURGE CURRENT INSTANTANEOUS REVERSE CURRENT, 175 www.diode.kr Diode Semiconductor Korea