SBJ2620 DIOTEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
SBJ2620 ... SBJ2645 SBJ2620 ... SBJ2645 Schottky Barrier Rectifier Diodes – Single Diode Schottky-Barrier-Gleichrichterdioden – Einzeldiode Version 2010-09-30 Dimensions - Maße [mm] Nominal current Nennstrom 26 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 20...45 V Isolated plastic case Isoliertes Kunststoffgehäuse ITO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 26 A SBJ2620 20 20 < 0.50 < 0.58 SBJ2630 30 30 < 0.50 < 0.58 SBJ2640 40 40 < 0.50 < 0.58 SBJ2645 45 45 < 0.50 < 0.58 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 18 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 55 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle SBJ2620... SBJ2645 TA = 25°C IFSM 280/320 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 390 A2s Junction temperature – Sperrschichttemperatur in DC forward mode – bei Gleichstrom-Durchlassbetrieb Tj Tj -50...+150°C ≤ 200°C
1 Tj = 25°C
2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 Type Typ 5.08±0.1 0.7 ±0.2 1.3 10.1±0.3 3.8 ±0.3 2.7 ±0.2 13.6 15 ±0.3 Ø ±0.2 3.2 2.6 ±0.2 0.6 ±0.1 8.4 4.5±0.2 2.6±0.2
SBJ2620 ... SBJ2645 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C Tj = 100°C VR = VRRM VR = VRRM IR IR < 500 µA < 20 mA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 3.0 K/W 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. GehäusetemperaturZul. Richtstrom 120 100 IFAV [%] [°C]TC 150100500 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) SBJ2620...SBJ2645 [A] IF 0 VF 0.4 0.6 [V] 1.0