SBG1030 SIRECTIFIER | Alldatasheet
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Technical content
FEATURES
- Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications MECHANICAL DATA * Case: D2PAK molded plastic * Polarity: As marked on the body * Weight: 0.06 ounces, 1.7 grams SBG1030 SBG1035 SBG1040 SBG1045 VRRM V VRMS V 24.5 31.5 VDC V A=Anode, C=Cathode, TAB=Cathode Low VF Schottky Barrier Rectifiers Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=95 C IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Maximum Forward Voltage At 5A DC (Note 1)VF IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25 C @TJ=100 C CJ Typical Junction Capacitance (Note 2) TSTG Storage Temperature Range Maximum Ratings 250 0.60 1.0 280 -55 to +150 A A V Unit mA pF o o o C o NOTES: 1. 300us Pulse Width, 2% Duty Cycle. 2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 3. Thermal Resistance Junction To Case. Typical Thermal Resistance (Note 3) 3.0ROJC C/W o TJ Operating Temperature Range -55 to +125 C o C(TAB) C A CA Dimensions TO-263(D2PAK) 1. Gate 2. Collector 3. Emitter 4. Collector Botton Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 8.00 8.89 .315 .350 E 9.65 10.29 .380 .405 E1 6.22 8.13 .245 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.20 0 .008 R 0.46 0.74 .018 .029
Low VF Schottky Barrier Rectifiers