SBF50P10-023L SENSITRON | Alldatasheet

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Technical content

  • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
  • World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4998, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES:
  • 100 Volt, 0.023 Ohm, 90A MOSFET (current limited to 50A by package)
  • Characterized for VGS of 4.5V for Logic Level Drive
  • Total Dose Characterized to 300 Krad
  • Single Event Effect Capability Characterized to 60 MeVcm2/mg LET
  • Isolated Hermetic Metal Package; Ultra Low RDS (on)
  • Ceramic Seals with Glidcop leads
  • Also available with glass seals and copper core alloy 52 leads MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE V GS - - ±20 Volts ON-STATE DRAIN CURRENT I D25 - - - 50 Amps PULSED DRAIN CURRENT I DM - - - 90 Amps OPERATING AND STORAGE TEMPERATURE T J/TSTG -55 - +150 °C TOTAL DEVICE DISSIPATION P D - - 225 Watts THERMAL RESISTANCE, JUNCTION TO CASE RθJC - - 0.55 °C/W

ELECTRICAL CHARACTERISTICS

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = - 250µA BVDSS -100 - - Volts STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = - 10V, ID = - 20A VGS = - 4.5V, ID = - 15A RDS(ON) 0.019 0.021 0.023 0.025 Ω GATE THRESHOLD VOLTAGE VDS = VGS, ID = - 250µA VGS(th) - 1 - - 3 Volts FORWARD TRANSCONDUCTANCE VDS = - 15V, ID = - 20A gfs - 80 - S(1/Ω) ZERO GATE VOLTAGE DRAIN CURRENT VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C TJ = 125°C IDSS - 1 - 500 µA GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V IGSS - - 100 -100 nA TURN ON DELAY TIME VDD = - 50V RISE TIME ID = - 50A TURN OFF DELAY TIME VGS= - 10V FALL TIME RG = 1Ω td(ON) tr td(OFF) tf - 20 510 145 870 855 220 1300 nsec DIODE FORWARD VOLTAGE IF = - 20A, VGS = 0V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % VSD - - 1.0 - 1.5 Volts REVERSE RECOVERY TIME TJ = 25°C, IF= - 20A, VR = - 50V di/dt = - 100A/µsec trr 120 nsec INPUT CAPACITANCE VGS = 0 V, OUTPUT CAPACITANCE VDS = - 50 V, REVERSE TRANSFER CAPACITANCE f = 1.0MHz Ciss Coss Crss - 11100 700 1700 pF SBF50P10-023L

  • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
  • World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON TECHNICAL DATA DATA SHEET 4998, REV. - Post-Total Dose (up to TID ratings) Irradiation Data CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = 0V, ID = -250µA BVDSS -100 - - Volts STATIC DRAIN TO SOURCE ON STATE RESISTANCE VGS = -10V, ID = -20A VGS = - 4.5V, ID = - 15A RDS(ON) 0.019 0.021 0.023 0.025 Ω GATE THRESHOLD VOLTAGE VDS = VGS, ID = -250µA VGS(th) -1 - -3 Volts ZERO GATE VOLTAGE DRAIN CURRENT VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25°C IDSS µA GATE TO SOURCE LEAKAGE FORWARD VGS = 20V GATE TO SOURCE LEAKAGE REVERSE VGS = -20V IGSS - - 100 -100 nA DIODE FORWARD VOLTAGE IF = -20A, VGS = 0V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % VSD - - 1.0 -1.5 Volts Single Event Effect Safe Operating Area VDS (V) Ion LET (MeVcm /mg) Energy (MeV) Range (µm) VGS=0V V GS= 5V VGS= 10V VGS= 15V VGS= 20V Br 37.47 278 36.1 -100 -100 -100 -100 -100 I 59.72 320 31.1 -100 -100 -100 -100 -100 SEE Safe Operation Area -120 -100 -80 -60 -40 -20 0 5 10 15 20 VGS (V) VDS (V) Br I SBF50P10-023L
  • 221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE (631) 586-7600 • FAX (631) 242-9798•
  • World Wide Web Site - www.sensitron.com • E-Mail Address - sales@sensitron.com • SBF50P10-023L SENSITRON TECHNICAL DATA DATA SHEET 4998, REV. - MECHANICAL DIMENSIONS: in Inches / mm PINOUT TABLE TO-254CG (Modified) DEVICE TYPE PIN-1 PIN-2 PIN-3 P-CHANNEL MOSFET MODIFIED TO-254 PACKAGE DRAIN SOURCE GATE DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.