SBF-5089 SIRENZA | Alldatasheet

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EDS-103413 Rev. C 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2004 Sirenza Microdevices, Inc.. All worldwide rights reserved. SBF-5089 SBF-5089Z DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Product Features

  • Available in Lead Free, RoHS compliant, & Green packaging
  • IP3 = 41dBm @ 240MHz
  • Stable Gain Over Temperature
  • Robust 1000V ESD, Class 1C
  • Operates From Single Supply
  • Low Thermal Resistance

Applications

  • Receiver IF Applications
  • Cellular, PCS, GSM, UMTS
  • IF Amplifier
  • Wireless Data, Satellite Terminals Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non- linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. lobmyS retemaraP stinU ycneuqerF .niM .pyT .xaM Gn iaGlangiSllamSB d zHM07 zHM042 zHM005 5.81 0.81 5.02 0.02 5.91 5.12 0.12 P Bd1 noisserpmoCBd1tarewoPtuptuOm Bd zHM07 zHM042 zHM0042 .91 7.02 PIO 3 tnioPtpecretnIredrOdrihTtuptuOm Bd zHM07 zHM042 zHM0045 .73 0.93 0.14 5.93 LRIs soLnruteRtupnIB dz HM0054 18 1 LROs soLnruteRtuptuOB dz HM0052 16 1 FNe rugiFesioNB dz HM0058 .28 .3 VD egatloVgnitarepOeciveDV 5 .49 .43 .5 ID tnerruCgnitarepOeciveDA m2 80 98 9 R HT l-j, )daelotnoitcnuj(ecnatsiseRlamrehTW /C°3 4 Test Conditions: VS = 8 V I D = 90 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm RBIAS = 33 Ohms T L = 25ºC Z S = ZL = 50 Ohms, App circuit page 4 Gain & Return Loss Vs Frequency +25c 7.5 12.5 17.5 22.5 0 100 200 300 400 500 600 700 800 900 Frequency(MHz) Gain(dB) -40 -35 -30 -25 -20 -15 -10 IRL, ORL (dB) S21 S11 S22 Pb RoHS Compliant & Packag eGreen

2 EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com Typical RF Performance at Key Operating Frequencies VS = 8 V I D = 80 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm RBIAS = 39 Ohms T L = 25ºC Z S = ZL = 50 Ohms Frequency (MHz) Test Conditions: lobmyS retemaraP tinU 07 001 042 004 005 058 PIO 3 tnioPtpecretnIredrOdrihTtuptuOm Bd9 39 31 45 .939 34 3 Frequency (MHz) Test Conditions: VS = 8 V I D = 90 mA Typ. OIP 3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm RBIAS = 33 Ohms T L = 25ºC Z S = ZL = 50 Ohms using app circuit see page 4 Absolute Maximum Ratings retemaraP timiLetulosbA .xaM tnerruCeciveD I( D) 1 05 Am .xaM eciveD V(egatloV D)V 6 .xaM rewoPtupnIFR mBd91+ detapissiDgnitarepOxaM rewoP W8.0 .xaM pmeTnoitcnuJ T(. J) C°051+ pmeTgnitarepO T(egnaR. L) C°58+otC°04- .xaM pmeTegarotS . C°051+ yamstimilesehtfoenoynadnoyebecivedsihtfonoitarepO ,noitareposuonitnocelbailerroF.egamadtnenamrepesuac mumixamehtdeecxetontsumtnerrucdnaegatlovecivedeht .enoegapnoelbatehtnideificepsseulavgnitarepo :noisserpxegniwollofehtyfsitasosladluohssnoitidnoCsaiB IDVD T(< J T- L R/) HT Tl-j, L T= DAEL P1dB vs Temp 17.5 18.5 19.5 20.5 21.5 50 150 250 350 450 550 650 750 850 Frequency(MHz) Output Power (dBm) +25c -40c +85c TOIP vs Temp 50 150 250 350 450 550 650 750 850 Frequency(MHz) TOIP (dB) +25c -40c +85c Noise Figure vs Temp 0.5 1.5 2.5 3.5 4.5 50 150 250 350 450 550 650 750 850 Frequency(MHz) NF (dB) +25c -40c +85c

3 EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com |S11| vs. Frequency |S21| vs. Frequency |S12| vs. Frequency |S22| vs. Frequency -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) S11 (dB) +25c -40c +85c 17.5 18.5 19.5 20.5 21.5 50 150 250 350 450 550 650 750 850 Frequency (MHz) S21 (dB) +25c -40c +85c -25 -24.5 -24 -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 50 150 250 350 450 550 650 750 850 Frequency (MHz) S12 (dB) +25c -40c +85c -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) S22 (dB) +25c -40c +85c Test Conditions : Vs = 8v, R-bias = 33ohm, Id = 90mA, Temp = +25c Bias Sweep vs. Temperature 100 02468 Source voltage Current(mA) +25c -40c +85c NOTE: Output Return Loss Can be improved at low end of band with L1 selection, see Page 4 app circuit.

4 EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com ecnerefeR rotangiseD )zhM(ycneuqerF 07 001 042 005 058 CB Fu1F p0001F p0001F p022F p001 CD Fu1F p001F p001F p001F p86 LC Hu8.6H u2.1H u2.1H n86H n33 Basic Application Circuit RF in RF out 1 uF CBCB CD VS RBIAS LC 1000 pF SBF-5089 Application Circuit Element Values Part Number Ordering Information rebmuNtraP eziSleeR leeR/seciveD 9805-FBS" 70 001 Z9805-FBS" 70 001 Part Identification Marking #niP noitcnuF noitpircseD 1 NIFRe suehtseriuqernipsihT.niptupniFR roticapacgnikcolbCDlanretxenafo .noitarepofoycneuqerfehtrofnesohc 4,2 DNGs elohaivesU.dnuorgotnoitcennoC daelecuderotecnamrofreptsebrof sasdaeldnuorgotesolcsaecnatcudni .elbissop 3 /TUOFR SAIB siegatlovCD.nipsaibdnatuptuoFR CDaerofereht,nipsihtnotneserp rofyrassecensiroticapacgnikcolb .noitareporeporp Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. BF5 IrofseulaVrotsiseRsaiBdednemmoceR D Am09= R SAIB V(= S V- D I/) D V(egatloVylppuS S)V 5.7V 8V 01V 21 R SAIB 723 35 57 7 R:etoN SAIB .erutarepmetrevoytilibatssaibCDsedivorp 3123 Mounting Instructions 1. NOTE: For broadband RF unconditional stability do not put GND vias under the exposed backside GND paddle. 2. Solder the copper pad on the backside of the device package to the ground plane. 3. Use a large ground pad area with many plated through-holes as shown. 4. We recommend 1 or 2 ounce copper. Measurement for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. CBL1CB Rbias LC CD BF5Z 3123 Tin-Lead Lead Free

5 EDS-103413 Rev. C Preliminary SBF-5089 DC-500 MHz Cascadable MMIC Amplifier 303 South Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com 0.3255 [8.27] 0.2560 [6.50] DEVICE CENTERLINE 0.0775 [1.97] 0.0750 [1.91] INPUT/OUTPUT TRACE CENTERLINE 0.0420 [1.07] 0.0506 [1.29] 0.0800 [2.03] 0.0899 [2.28] 0.0270 [0.69] Ø0.0200 [Ø0.51] GND Via 9X 0.0250 [0.64] (2X) 0.0540 [1.37] (2X) 0.0640 [1.63] (2X) 0.0750 [1.91] (2X) 0.0540 [1.37] 0.0449 [1.14] NOTE: For broadband RF unconditional stability do not put vias under exposed gnd PCB Pad Layout Dimensions in inches [millimeters] See Application Note AN-075 For Package Outline Drawing