SBESD0501CL-C SECOS | Alldatasheet
Document overview
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Technical content
88W, 5V Ultra Low Capacitance ESD Protection Diode 20-Sep-2018 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SBESD0501CL-C is a low-capacitance Transient Voltage Suppressor (TVS) designed to provide electrostatic discharge (ESD) protection for high-speed data interfaces. With typical capacitance of 0.25pF, SBESD0501CL-C is designed to protect parasitic-sensitive systems against over-voltage and over-current transient events. It complies with IEC 61000-4-2 (ESD), Level 4 (±15kV air, ±8kV contact discharge), IEC 61000-4-4 (electrical fast transient - EFT) (40A, 5/50 ns), very fast charged device model (CDM) ESD and cable discharge event (CDE), etc. Each SBESD0501CL-C device can protect one high-speed data line. It offers system designers flexibility to protect single data line where space is a premium concern. The combined features of low capacitance, ultra-small size and high ESD robustness make SBESD0501CL-C ideal for high-speed data port and high-frequency line applications, such as cellular phones and HD visual devices.
FEATURES
/circle6 Low Capacitance /circle6 Low Leakage Current /circle6 Low Clamping Voltage
APPLICATIONS
/circle6 Serial ATA /circle6 Desktops, Servers and Notebooks /circle6 Cellular Phones /circle6 MDDI Ports /circle6 USB Data Line Protection /circle6 Display Ports /circle6 Digital Visual Interfaces (DVI) MARKING 5BU
PACKAGE INFORMATION
SBESD0501CL-C Lead (Pb)-free and Halogen-free DFN1006 A 0.95 1.05 E 0.64BSC B 0.55 0.65 F 0.45 0.55 C 0.45 0.55 G 0.2 0.3 D 0.15 0.25 Bi -direction
88W, 5V Ultra Low Capacitance ESD Protection Diode 20-Sep-2018 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Air Discharge IEC 61000-4-2 Contact Discharge VESD ±20 kV Peak Pulse Power @tp=8/20µs P PP 88 W Operating Temperature TOPT -55~125 °C Storage Temperature TSTG -55~150 °C
ELECTRICAL CHARACTERISTICS
(T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse Working Voltage V RWM - - 5 V Reverse Breakdown Voltage V BR 6 - - V I T=1mA Reverse Leakage Current I R - - 100 nA V RWM =5V - - 13 I PP =1A, tp=8/20µs Clamping Voltage V C - - 22 V IPP =4A, tp=8/20µs Junction Capacitance C J - 0.25 0.4 pF V R=0, f=1MHz CHARACTERISTICS CURVES