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Technical content

Features

  • Composite type device with 2 low I R SBD shoused in one package, facilitating high density mounting
  • Small switching noise
  • Low forward voltage (I F=2.0A, VF max=0.62V)
  • Low reverse current (V R=15V , IR max=7.5μA)
  • Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Specifi cations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 30 V Average Output Current IO When mounted on ceramic substrate, Rectangular wave 180°C 2.0 A When mounted on glass epoxy substrate 1.5 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 20 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C *: The absolute maximum ratings and electrical characteristics refer to those between Terminal 1 and Terminal 7 (or 8), and between Terminal 3 and Terminal 5 (or 6) Package Dimensions unit : mm (typ) 7045-004 Product & Package Information
  • Package : EMH8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL 1 : Anode1 2 : NC 3 : Anode2 4 : Anode2(NC) 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 EMH8 1 4 0.125 0.20.2 2.1 1.7 0.5 2.0 0.2 0.750.05 SBE818-TL-E 2341 7658 SC Lot No. *: Terminal 4 is used for the purposes such as test. Al- though it is connected to Anode 2, please handle it as NC Terminal. 71812 TKIM/D0308SB MSIM TC-00001737 No. A1379-1/6 http://onsemi.com Semiconductor Components Industries, LLC, 2013 September, 2013 SBE818 Schottky Barrier Diode 30V, 2A, Low IR, Non-Monolithic Dual EMH8 Common Cathode Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=1mA 30 V Forward Voltage VF1I F=1.0A 0.48 0.53 V VF2I F=1.5A 0.53 0.58 V VF3I F=2.0A 0.57 0.62 V Reverse Current I R VR=15V 7.5 μA Interterminal Capacitance C V R=10V, f=1MHz 30 pF Reverse Recovery Time t rr IF=IR=100mA, See specifi ed Test Circuit. 10 ns Thermal Resistance Rth(j-a)1 When mounted in Cu-foiled area of 0.96mm ×0.03mm on glass epoxy substrate 100 °C / W Rth(j-a)2 When mounted on ceramic substrate (900mm ×0.8mm) 65 °C / W trr Test Circuit

Ordering Information

Device Package Shipping memo SBE818-TL-E EMH8 3,000pcs./reel Pb Free Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA SBE818 No. A1379-2/6

Ta=125 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C °C100 1E+00 (2) (3) (5) (1) 0.5 1.8 1.6 1.4 1.2 0.2 0.4 0.6 0.8 1.0 2.52.01.0 1.5 IT14258 (4) 0.0E+00 1.0E--05 1.5E--05 2.0E--05 2.5E--05 3.0E--05 3.5E--05 4.0E--05 4.5E--05 5.0E--05 105 5.0E--06 2015 25 30 35 IT14259 (1) (2) (3) (4) 125 100 150 IT14260 (5)(1) (2) (4) 125 100 150 IT14261 (3) (5)(1) (2) (4) (3) Forward V oltage, VF -- V Forward Current, IF -- μA IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- μA 0.01 23 7 0.1 52 2 37 1.05 IT13214 0.1 1.0 10 100 23 5 7 23 3 55 72 IT13217 Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(A V) -- W 180° 360° Sine wave θ 360° Rectangularwave (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Ta -- IO θ 360° 180° 360° Rectangularwave Sinewave Ambient Temperature, Ta -- °C Average Output Current, IO -- A PR(AV) -- VR Average Reverse V oltage, VR -- V (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sine wave 180° 360° VR Average Reverse Power Dissipation, PR(A V) -- W IFSM -- t Time, t -- s Surge Forward Current, IFSM(Peak) -- A IS 20ms t Current waveform 50Hz sine wave C -- VR Reverse V oltage, VR -- V Interterminal Capacitance, C -- pF f=1MHz (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC Ta -- IO θ 360° 180° 360° Rectangularwave Sinewave Ambient Temperature, Ta -- °C Average Output Current, IO -- A (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC θ 360° VR SBE818 No. A1379-3/6

Embossed Taping Specifi cation SBE818-TL-E SBE818 No. A1379-4/6

Outline Drawing Land Pattern Example SBE818-TL-E Mass (g) Unit 0.008 * For reference mm Unit: mm 0.4 0.3 0.5 1.9 SBE818 No. A1379-5/6

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