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Technical content

Features

  • Small switching noise
  • Low leakage current and high reliability due to highly reliable planar structure
  • Ultrasmall package allows applied sets to be made small and thin Specifi cations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V RRM 60 V Nonrepetitive Peak Reverse Surge Voltage V RSM 65 V Average Output Current IO 1.0 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Package Dimensions unit : mm (typ) 7012-001 2.9 0.65 2.8 0.250.25 2.3 0.750.07 0.3 1234 876 5 0.15 1 : Anode1 2 : No Contact 3 : Anode2 4 : No Contact 5 : Cathode2 6 : Cathode2 7 : Cathode1 8 : Cathode1 VEC8 SBE812-TL-E Product & Package Information
  • Package : VEC8
  • JEITA, JEDEC : -
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection TL SA LOT No. 91912 TKIM/D2605SB MSIM TB-00002015 No.8966-1/6 http://onsemi.com Semiconductor Components Industries, LLC, 2013 September, 2013 SBE812 Schottky Barrier Diode 60V, 1A, Low IR, Non-Monolithic Dual VEC8 Common Cathode Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Electrical Characteristics at Ta=25°C (Value per element) Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage V R IR=0.2mA 60 V Forward Voltage V F IF=1A 0.55 0.60 V Reverse Current I R VR=30V 30 μA Interterminal Capacitance C V R=10V, f=1MHz 35 pF Reverse Recovery Time t rr IF=100mA, See specifi ed Test Circuit. 10 ns Thermal Resistance Rth(j-a)1 When Mounted in Cu-foiled area of 1.92mm ×0.03mm on glass epoxy substrate 80 °C / W Rth(j-a)2 When mounted on ceramic substrate (1000mm ×0.8mm) 75 °C / W trr Test Circuit

Ordering Information

Device Package Shipping memo SBE812-TL-E VEC8 3,000pcs./reel Pb Free Duty≤10% 50Ω 100Ω 10Ω --5V trr 10μs 100mA100mA 10mA Forward V oltage, VF -- V Forward Current, IF -- A IF -- VF Reverse V oltage, VR -- V IR -- VR Reverse Current, IR -- μA 0.1 1.0 0.01 0.001 IT10113 IT10114 0.001 0.01 0.1 1.0 100 1000 10000 10 20 30 40 50 60 70 Ta=125 100 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C SBE812 No.8966-2/6

(3)(1) (2) (4) 0.2 0.6 0.4 0.8 1.0 0.1 0.5 0.3 0.7 0.9 IT10115 0.00E+00 2.00E--04 4.00E--04 6.00E--04 2010 8.00E--04 1.00E--04 3.00E--04 5.00E--04 7.00E--04 4030 60 50 70 IT10116 (1) (2) (3) (1) (2) (3) (4) (4) *When mounted in reliability operaion board, Rth(J-a)=80°C/W 0.1 2 100 35 7 1.0 10 23 5 7 23 5 7 IT09258Reverse V oltage, VR -- V C -- VR Interterminal Capacitance, C -- pF 2 1.032 3 572 0.135 70.017 IT09290 IFSM -- t IS 20ms t Current waveform 50Hz sine wave Time, t -- s Surge Forward Current, IFSM(Peak) -- A PF(AV) -- IO PR(AV) -- VR θ 360° 180° 360° Average Output Current, IO -- A Average Forward Power Dissipation, PF(A V) -- W (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ =180° Rectangularwave Sine wave Peak Reverse V oltage, VR -- V Average Reverse Power Dissipation, PR(A V) -- W (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sine wave θ 360° VR 180° 360° VR Tc -- IO θ 360° 180° 360° (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangularwave Sinewave Case Temperature, Tc -- °C Average Output Current, IO -- A SBE812 No.8966-3/6

Taping Specifi cation SBE812-TL-E SBE812 No.8966-4/6

Outline Drawing Land Pattern Example SBE812-TL-E Mass (g) Unit 0.015 * For reference mm Unit: mm 0.4 0.6 2.8 0.65 SBE812 No.8966-5/6

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. SBE812 PS No.8966-6/6