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Technical content

Features

  • Low switching noise
  • Low reverse current (VR=16V, IR max=15µA) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 30 V Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V Average Output Current IO 1.0 A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj - -55 to +125 °C Storage Temperature Tstg - -55 to +125 °C Package Dimensions unit : mm (typ) 7017A-001 Product & Package Information
  • Package : CPH5
  • JEITA, JEDEC : SC-74A, SOT-25
  • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking Electrical Connection 1 : Cathode 2 : Cathode 3 : Anode 4 : No Contact 5 : Anode CPH5 453 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 SJ LOT No. TL 435 SBE807-TL-E SBE807-TL-W 31814HK TC-00002874/91912TKIM/22708TIIM SB No. A1055-1/4 http://onsemi.com Semiconductor Components Industries, LLC, 2014 March, 2014 SBE807 Schottky Barrier Diode 30V, 1A, Low IR Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage VR IR=0.2mA 30 V Forward Voltage VF1 IF=0.7A 0.45 0.50 V VF2 IF=1.0A 0.48 0.53 V Reverse Current IR VR=16V 15 µA Interterminal Capacitance C VR=10V, f=1MHz 27 pF Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns Thermal Resistance Rth(j-a) When mounted on ceramic substrate (900mm ×0.8mm) 111 °C / W trr Test Circuit

Ordering Information

Device Package Shipping memo SBE807-TL-E CPH5 3,000pcs./reel Pb-Free SBE807-TL-W Pb-Free and Halogen Free Duty≤10% 50Ω 100Ω 10Ω --5V trr 10µs 100mA100mA 10mA 0 100 35 0.01 0.1 1.0 0.0001 0.001 0.01 0.1 1.0 100 1000 10000 201552 53 0 Ta=125 0°C --25 Ta=125°C 100°C 75°C 50°C 25°C 0°C --25°C 100 Forward Voltage, VF -- V Forward Current, IF -- A IF -- VF Reverse Voltage, VR -- V IR -- VR Reverse Current, IR -- µA Average Output Current, IO -- A PF(AV) -- IO Average Forward Power Dissipation, PF(AV) -- W Ta -- IO Ambient Temperature, Ta -- °C Average Output Current, IO -- A 0.8 0.7 0.5 0.3 0.6 0.4 0.2 0.1 IT13283 IT09553 (1) (2)(4)(3) (5) 125 100 150 IT13284 IT09554 (3)(1) (2) (4) (5) (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° (5)DC θ 360° 180° 360° Rectangularwave Sinewave Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. SBE807 No. A1055-2/4

7 0.01 23 7 0.1 52 2337 1.05 ID00435 IFSM -- t IS 20ms t Current waveform 50Hz sine wave Time, t -- s Surge Forward Current, IFSM(Peak) -- A 0.11 .0 100 23 57 2 1035 23 57 IT09556Reverse Voltage, VR -- V C -- VR Interterminal Capacitance, C -- pF SBE807 No. A1055-3/4

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