SBC846BLT1G

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Technical content

Features

• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BC846 BC847, BC850 BC848, BC849 VCEO Vdc Collector−Base Voltage BC846 BC847, BC850 BC848, BC849 VCBO Vdc Emitter−Base Voltage BC846 BC847, BC850 BC848, BC849 VEBO 6.0 6.0 5.0 Vdc Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 1) R/C0113JA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 2) R/C0113JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM COLLECTOR BASE EMITTER www.onsemi.com See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

/C0071 XX = Device Code M = Date Code* /C0071= Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location.

www.onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage BC846A, B (IC = 10 mA) BC847A, B, C, BC850B, C BC848A, B, C, BC849B, C V(BR)CEO 65 V Collector−Emitter Breakdown Voltage BC846A, B (IC = 10 /C0109A, VEB = 0) BC847A, B, C BC850B, C BC848A, B, C, BC849B, C V(BR)CES 80 V Collector−Base Breakdown Voltage BC846A, B (IC = 10 /C0109A) BC847A, B, C, BC850B, C BC848A, B, C, BC849B, C V(BR)CBO 80 V Emitter−Base Breakdown Voltage BC846A, B (IE = 1.0 /C0109A) BC847A, B, C, BC850B, C BC848A, B, C, BC849B, C V(BR)EBO 6.0 6.0 5.0 V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO − 5.0 nA /C0109A ON CHARACTERISTICS DC Current Gain BC846A, BC847A, BC848A (IC = 10 /C0109A, VCE = 5.0 V) BC846B, BC847B, BC848B BC847C, BC848C (IC = 2.0 mA, VCE = 5.0 V) BC 846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C hFE − 110 200 420 150 270 180 290 520 220 450 800 Collector−Emitter Saturation Voltage (I C = 10 mA, IB = 0.5 mA) Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − 0.25 0.6 V Base−Emitter Saturation Voltage (I C = 10 mA, IB = 0.5 mA) Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − 0.7 0.9 V Base−Emitter Voltage (I C = 2.0 mA, VCE = 5.0 V) Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 660 700 770 mV SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT 100 − − MHz Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k/C0087, BC846A,B, BC847A,B,C, BC848A,B,C f = 1.0 kHz, BW = 200 Hz) BC849B,C, BC850B,C NF 4.0 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Figure 1. DC Current Gain vs. Collector Figure 2. DC Current Gain vs. Collector Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Saturation Voltage vs. Figure 5. Base Emitter Voltage vs. Collector

0.9 IC/IB = 20

1.1 VCE = 5 V

Figure 10. DC Current Gain vs. Collector Figure 11. DC Current Gain vs. Collector Figure 12. Collector Emitter Saturation Voltage Figure 13. Base Emitter Saturation Voltage vs. Figure 14. Base Emitter Voltage vs. Collector

Figure 19. DC Current Gain vs. Collector Figure 20. DC Current Gain vs. Collector Figure 21. Collector Emitter Saturation Voltage Figure 22. Base Emitter Saturation Voltage vs. Figure 23. Base Emitter Voltage vs. Collector

Figure 28. DC Current Gain vs. Collector Figure 29. DC Current Gain vs. Collector Figure 30. Collector Emitter Saturation Voltage Figure 31. Base Emitter Saturation Voltage vs. Figure 32. Base Emitter Voltage vs. Collector

www.onsemi.com Device Marking Package Shipping† BC846ALT1G 1A SOT−23 (Pb−Free) 3,000 / Tape & Reel SBC846ALT1G* BC846ALT3G 1A SOT−23 (Pb−Free) 10,000 / Tape & Reel BC846BLT1G 1B SOT−23 (Pb−Free) 3,000 / Tape & Reel SBC846BLT1G* BC846BLT3G 1B SOT−23 (Pb−Free) 10,000 / Tape & Reel SBC846BLT3G* BC847ALT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BC847ALT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BC847BLT1G 1F SOT−23 (Pb−Free) 3,000 / Tape & Reel SBC847BLT1G* BC847BLT3G 1F SOT−23 (Pb−Free) 10,000 / Tape & Reel NSVBC847BLT3G* BC847CLT1G 1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBC847CLT1G* BC847CLT3G 1G SOT−23 (Pb−Free) 10,000 / Tape & Reel BC848ALT1G 1J SOT−23 (Pb−Free) 3,000 / Tape & Reel BC848BLT1G 1K SOT−23 (Pb−Free) 3,000 / Tape & Reel SBC848BLT1G* BC848BLT3G 1K SOT−23 (Pb−Free) 10,000 / Tape & Reel BC848CLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BC848CLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BC849BLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BC849BLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BC849CLT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel BC849CLT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BC850BLT1G 2F SOT−23 (Pb−Free) 3,000 / Tape & Reel NSVBC850BLT1G* BC850CLT1G 2G SOT−23 (Pb−Free)NSVBC850CLT1G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe- cifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.

www.onsemi.com PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. /C0466mm inches/C0467SCALE 10:1 0.8 0.031 0.9 0.035 0.95 0.0370.95 0.037 2.0 0.079 VIEW C L 0.25 /C0113 e E E b A SEE VIEW C DIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.11 0.035 INCHES A1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 NOM MAX H c STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a numb er of patents, trademarks, reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 BC846ALT1/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative