SBB-2089 SIRENZA | Alldatasheet

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Technical content

Broomfield, CO 80021 1 EDS-104005 Rev C The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for i naccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to chang e without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in lif e-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved. 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com SBB-2089 SBB-2089Z 50 - 850 MHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier Product Features

  • Available in Lead Free, RoHS compliant, & Green packaging
  • IP3 = 42.8 dBm @ 240MHz
  • P1dB = 20.8 dBm @ 500MHz
  • Single Fixed 5V Supply
  • Robust 1000V ESD, Class 1C
  • Patented Thermal Design & Patent Pending Bias Circuit
  • Low Thermal Resistance
  • MSL 1 moisture rating

Applications

  • Receiver IF Amplifier
  • Cellular, PCS, GSM, UMTS
  • Wireless Data, Satellite Terminals Sirenza Microdevices’ SBB-2089 is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SBB-2089 does not require a dropping resistor as compared to typical Darlington amplifiers. The SBB-2089 product is designed for high linearity 5V gain block applications that require small size and minimal external components. It is internally matched to 50 ohms. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxide nor halogenated fire retardants. Pb RoHS Compliant & PackageGreen Gain & Return Loss vs. Frequency (w/ App. Ckt.) -50 -40 -30 -20 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB S22 S21 S11 Symbol Parameters Units Frequency Min. Typ. Max.

70 MHz 20

240 MHz 18.5 20 21.5 400 MHz 18.5 20 21.5

240 MHz 20

400 MHz 18.5 21

70 MHz 41

240 MHz 43

400 MHz 39 41

Bandwidth S11, S22: Minimum 10dB Return Loss (typ.) MHz 50 - 850 IRL Input Return Loss dB 70 -500MHz 15 20 ORL Output Return Loss dB 70 -500MHz 11 14 S12 Reverse Isolation dB 70 -500MHz 22 NF Noise Figure dB 500 MHz 2.7 3.7 VD Device Operating Voltage V 5 5.3 ID Device Operating Current mA 82 90 98 RTH, j-l Thermal Resistance (junction - lead) °C/W 48.8 dB Small Signal GainS21 P1dB Output Power at 1dB Compression dBm dBm Test Conditions: V D = 5V I D = 90mA Typ. OIP 3 Tone Spacing = 1MHz, Pout per tone = 0 dBm T L = 25°C Z S = ZL = 50 Ohms Tested with Bias Tees IP3 Third Order Intercept Point

Broomfield, CO 80021 2 EDS-104005 Rev C SBB-2089 50-850 MHz Cascadable MMIC Amplifier 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Typical RF Performance at Key Operating Frequencies (With Application Circuit) Data on Charts taken with App. Ckt. Noise Figure vs. Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB 25C -40C 85C OIP3 vs. Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dBm 25C -40C 85C P1dB vs. Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dBm 25C -40C 85C Symbol Parameter Unit 50 70 100 240 400 500 850 S21 Small Signal Gain dB 20 20 20 20 20 20 20 OIP3 Output Third Order Intercept Point dBm 40 40 41 42 41 40 35 P1dB Output Power at 1dB Compression dBm 20 20 20 20 20 20 19 IRL Input Return Loss dB 15 18 19 20 20 19 16 O R L O u t p u t R e t u r n L o s s d B 2 12 32 42 73 43 0 1 4 S12 R e v e r s e I s o l a t i o n d B 2 22 22 22 22 22 2 2 2 Frequency (MHz) Test Conditions: VCC = 5V I D = 90mA Typ. OIP 3 Tone Spacing = 1MHz, Pout per tone = 0 dBm TL = 25°C Z S = ZL = 50 Ohms

Broomfield, CO 80021 3 EDS-104005 Rev C SBB-2089 50-850 MHz Cascadable MMIC Amplifier 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com S-Parameters taken with Bias Tee over Temperature Device Current over Temperature (w/Bias Tee) Current vs. Voltage Over Temp. (Bias Tee) 100 120 Voltage (V) Current (mA) -40C 25C 85C S11 vs. Frequency -35 -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB 25C -40C 85C S21 vs. Frequency 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB 25C -40C 85C S12 vs. Frequency -35 -30 -25 -20 -15 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB 25C -40C 85C S22 vs. Frequency -50 -40 -30 -20 -10 50 150 250 350 450 550 650 750 850 Frequency (MHz) dB 25C -40C 85C

Broomfield, CO 80021 4 EDS-104005 Rev C SBB-2089 50-850 MHz Cascadable MMIC Amplifier 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Application Circuit S-Parameters over Temperature Device Current over Temperature (w/App. Ckt.) Current vs. Voltage Over Temp. (App. Ckt.) 100 120 Voltage (V) Current (mA) -40C 25C 85C S11 vs. Frequency -35 -30 -25 -20 -15 -10 50 150 250 350 450 550 650 750 850 Frequency (GHz) dB 25C -40C 85C S21 vs. Frequency 50 150 250 350 450 550 650 750 850 Frequency (GHz) dB 25C -40C 85C S12 vs. Frequency -35 -30 -25 -20 -15 50 150 250 350 450 550 650 750 850 Frequency (GHz) dB 25C -40C 85C S22 vs. Frequency -50 -40 -30 -20 -10 50 150 250 350 450 550 650 750 850 Frequency (GHz) dB 25C -40C 85C

Broomfield, CO 80021 5 EDS-104005 Rev C SBB-2089 50-850 MHz Cascadable MMIC Amplifier 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Application Schematic Evaluation Board Layout Application Circuit Element Values Mounting Instructions 1. Solder the copper pad on the backside of the device package to the ground plane. 2. Use a large ground pad area with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurement for this datasheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. ESD Class 1C Appropriate precautions in handling, packaging and testing devices must be observed. Absolute Maximum Ratings MSL (Moisture Sensitivity Level) Rating: Level 1 RF outRF in Vs Lc 1200pF1uF Cb Cb SBB-2089 Ls Parameter Absolute Limit Ma. Dvice Current (ID) 110 mA Max Device Voltage (VD) 5.5 V Max. RF Input Power +12 dBm Max. Operating Dissipated Power 0.61 W Max. Junction Temp. (TJ) +150°C Operating Temp. Range (TL) -40°C to +85°C Max. Storage Temp. +150°C Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I DVD < (TJ - TL) / RTH, j-l TL=TLEAD Reference Designator Frequency (MHz) 50 to 850 CB 8200pF LC 1200nH LS Coilcraft LS 2.7nH Toko

Broomfield, CO 80021 6 EDS-104005 Rev C SBB-2089 50-850 MHz Cascadable MMIC Amplifier 303 S. Technology Ct. Phone: (800) SMI-MMIC http://www.sirenza.com Suggested PCB Pad Layout Dimensions in inches [millimeters] BB2 3123 Lead Free Package Marking BB2Z1 3123 Tin-Lead Part Number Ordering Information Bottom View Side View Nominal Package Dimensions Dimensions in inches (millimeters) Refer to package drawing posted at www.sirenza.com for tolerances Part Number Reel Size Devices / Reel SBB-2089 7" 1000 SBB-2089Z 7" 1000 Pin # Function Description

1 RF IN

RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. 2, 4 GND Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible

3 RF OUT/

RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation.