SBAS16 SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
- The SBAS16 is designed for high-speed switching
Description
application in hybrid thick and thin-film circuits. * The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package. Marking 01-Jun-2002 Rev. A Page 1 of 2 Reverse Voltage Tj, Tstg PD VR VRR IF IFR IFSM Symbol C 1000 250 500 200 -65~+150Operating Junction and Storage Temperature Range Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation C o Repetitive Reverse Voltage Parameter Ratings Unit mA V V mW mA mW Absolute Maximum Ratings at TA = 25 o http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 S G D B L A Top View H C J K Characteristics at TA = 25:::: Characteristic Symbol Min. Max. Unit Test Conditions Reverse Breakdown Voltage V(BR) 75 - V IR=100uA VF(1) - 715 mV IF=1mA VF(2) - 855 mV IF=10mA VF(3) - 1000 mV IF=50mA Forward Voltage VF(4) - 1250 mV IF=150mA Reverse Current IR - 1 uA VR=75V Total Capacitance CT 2 pF VR=0, f=1MHz Reverse Recovery Time Trr - 6 nS IF=IR=10mA, RL=100Ł measured at IR=1mA RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 Characteristics Curve Elektronische Bauelemente SBAS16 High-Speed Switching Diode