SB820 WTE | Alldatasheet

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Technical content

Features

! S c h o t t k y B a r r i e r C h i p B ! Guard Ring for Transient Protection ! High Current Capability, Low Forward C ! Low Reverse Leakage Current ! H i g h S u r g e C u r r e n t C a p a b i l i t y G A ! Plastic Material has UL Flammability C l a s s i f i c a t i o n 9 4 V - O P I N 1 2 /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01D M e c h a n i c a l D a t a F E ! Case: TO-220A Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-202, Method 208 ! P o l a r i t y : S e e D i a g r a m I ! Weight: 2.24 grams (approx.) L ! M o u n t i n g P o s i t i o n : A n y H ! Marking: Type Number P I N 1 + + J P I N 2 - C a s e K Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB820 SB830 SB840 SB850 SB860 SB880 SB8100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 20 30 40 50 60 80 100 V RMS Reverse Voltage V R(RMS) 14 21 28 35 42 56 70 V Average Rectified Output Current @T C = 95°C I O 8.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 150 A Forward Voltage @I F = 8.0A V FM 0.55 0.75 0.85 V P e a k R e v e r s e C u r r e n t @ TA = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM 0.5 50 mA Typical Junction Capacitance (Note 1) C j 700 pF Typical Thermal Resistance Junction to Case (Note 2) R /G01JC 6.9 K/W Operating and Storage Temperature Range T j, TSTG -65 to +150 °C 2. Thermal resistance junction to case mounted on heatsink. WTE POWER SEMICONDUCTORS TO-220A Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 4.95 5.20 All Dimensions in mm

I ,AVERAGE OUTP UT CURRENT (A) (AV) 10 40 60 80 100 120 140150 T , LEAD TEMPERATURE (ºC) Fig. 1 Forward Current Derating Curve L Single Pulse Half-Wave

60 Hz Resistive or Inductive Load

0.1 1.0 10 10 0 C ,CAP ACITANCE j V , REVERSE VOLTAGE (V) Fig. 4 T ypical Junction Capacitance R T = 25ºCj f = 1MHz 120 150 1 10 100 I , P EAK FORW ARD SUR GE CURRENT (A FS M NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current 8.3ms Single Half Sine-Wave JEDEC Method 0.1 N STA NTANEOUS FORW ARD C URRENT ( F V , INSTANTANEOUS FORWARD VOLTAGE (V ) Fig. 2 T ypical Forward Characteristics F SB820 - SB840 SB850 - SB860 SB880 - SB8100 T = 25ºC Pulse Width = 300 s 2% Duty Cycle j µ SB820 – SB8100 2 of 3 © 2002 Won-Top Electronics

SB820 – SB8100 3 of 3 © 2002 Won-Top Electronics

ORDERING INFORMATION

Product No. Package Type Shipping Quantity SB820 TO-220A 50 Units/Tube SB830 TO-220A 50 Units/Tube SB840 TO-220A 50 Units/Tube SB850 TO-220A 50 Units/Tube SB860 TO-220A 50 Units/Tube SB880 TO-220A 50 Units/Tube SB8100 TO-220A 50 Units/Tube Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com