SB5H100-E3-54

SB5H90_09 VISHAY | Alldatasheet

Document overview

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Technical content

Document Number: 88722 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 04-Aug-09 DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance SB5H90, SB5H100 Vishay General Semiconductor

FEATURES

• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in middle voltage high frequency inverters, freewheeling, dc-to-dc conver ters, and polarity protection applications. MECHANICAL DATA Case: DO-201AD Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 5.0 A VRRM 90 V, 100 V IFSM 200 A VF 0.70 V IR 200 μA TJ max. 175 °C DO-201AD MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB5H90 SB5H100 UNIT Maximum repetitive peak reverse voltage V RRM 90 100 V Working peak reverse voltage V RWM 90 100 V Maximum DC blocking voltage V DC 90 100 V Maximum average forward rectified current at TC = 80 °C I F(AV) 5.0 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz I RRM 1.0 A Storage temperature range T STG - 55 to + 175 °C Maximum operating junction temperature T J 175 °C

www.vishay.com For technical qu estions within your region, please contact one of the following: Document Number: 88722 2 DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com Revision: 04-Aug-09 SB5H90, SB5H100 Vishay General Semiconductor Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Note Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS S YMBOL SB5H90 SB5H100 UNIT Maximum instantaneous forward voltage I F = 5.0 A TA = 25 °C VF (1) 0.80 V TA = 125 °C 0.70 Maximum reverse current at rated VR TA = 25 °C IR (2) 200 μA TA = 125 °C 10 mA THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) PARAMETER SYMBOL SB5H90 SB5H100 UNIT Maximum thermal resistance RθJA (1) 25 °C/W RθJL (1) 8 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g ) PPREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB5H100-E3/54 1.1 54 1400 13" diameter paper tape and reel SB5H100-E3/73 1.1 73 1000 Ammo pack packaging SB5H100HE3/54 (1) 1.1 54 1400 13" diameter paper tape and reel SB5H100HE3/73 (1) 1.1 73 1000 Ammo pack packaging 02 5 5 0 7 5 3.0 4.0 5.0 6.0 100 125 150 200 2.0 1.0 175 Case Temperature (°C) Average Forwar d Current (A) 1 10 100 120 240 200 160 Number of Cycles at 60 Hz Peak Forwar d Surge Current (A) TJ = TJ Max. 8.3 ms Single Half Sine-Wave

Document Number: 88722 For technical ques tions within your region, please contact one of the following: www.vishay.com Revision: 04-Aug-09 DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com SB5H90, SB5H100 Vishay General Semiconductor Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.01 0.1 100 Instantaneous Forward Voltage (V) In stantaneou s Forward Current (A) TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 100 °C TJ = 175 °C 20 60 40 100 80 0.01 0.1 10 000 Percent of Rated Peak Reverse Volta g e (%) In stantaneou s Rever se Current (μA) 100 1000 TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 100 °C 0.1 1 10 0.1 100 1000 Tran sient Thermal Impedance (°C/W) t - Pulse Duration (s) 10.1 100 10 100 1000 10 000 Reverse Voltage (V) Junction Capacitanc e (pF) DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2)

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