SB570_1 DIODES | Alldatasheet
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Technical content
Features
A 25.40 /c190 B 7.20 9.50 C 1.20 1.30 D 4.80 5.30 All Dimensions in mm A AB C D Maximum Ratings and Electrical Characteristics @T A =2 5/c176C unless otherwise specified /c183Guard Ring Die Construction for Transient Protection /c183Low Power Loss, High Efficiency /c183High Surge Capability /c183High Current Capability /c183Surge Overload Rating to 150A Peak /c183For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications /c183Lead Free Finish, RoHS Compliant (Note 2) Mechanical Data /c183Case: DO-201AD /c183Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 /c183Moisture Sensitivity: Level 1 per J-STD-020C /c183Terminals: Finish - Bright Tin. Plated Leads Solderable per MIL-STD-202, Method 208 /c183Polarity: Cathode Band /c183Ordering Information: See Last Page /c183Marking: Type Number /c183Weight: 1.1 grams (approximate) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB570 SB580 SB590 SB5100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 70 80 90 100 V RMS Reverse Voltage VR(RMS) 49 56 63 70 V Average Rectified Output Current @ T L =8 0/c176C IO 5.0 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) I FSM 150 A Forward Voltage @ I F = 5.0A VFM 0.80 V Peak Reverse Current @ T A =2 5 /c176C at Rated DC Blocking Voltage @ T A = 100/c176C IRM 0.5 50 mA Typical Junction Capacitance (Note 1) Cj 400 pF Typical Thermal Resistance Junction to Ambient R/c113JA 10 K/W Operating and Storage Temperature Range Tj, TSTG -65 to +150 /c176C Notes: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30135 Rev.5-2 2o f3 SB570 - SB5100 www.diodes.com 1 10 100 I , PEAK F ORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) 120 150 100 1000 0.1 1 10 100 C ,CAPA CITANCE (pF) j V , REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T= 2 5 ° CA f = 1.0 Mhz 0 20 40 60 80 100 120 140 I , INSTANTANE OUS REVERSE CURRENT (mA) R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T= 1 0 0 CA ° T= 7 5 CA ° T= 2 5 CA ° T= - 2 5 CA ° 0.1 0.01 0.001 0.0001 0.1 1.0 I , INSTANTANEOUS FORWARD CURRENT (A)F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F T= 2 5 CA ° T= 1 0 0 CA ° 02 5 5 0 75 100 125 150 I AVERAGE FORWARD CURRENT (A)(AV), T , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Deratin g Curve L ° Resistive or Inductive Load
DS30135 Rev.5-2 3o f3 SB570 - SB5100 www.diodes.com
Ordering Information
SB570-T DO-201AD 1.2K/Tape & Reel, 13-inch SB580-B DO-201AD 500/Bulk SB580-T DO-201AD 1.2K/Tape & Reel, 13-inch SB590-B DO-201AD 500/Bulk SB590-T DO-201AD 1.2K/Tape & Reel, 13-inch SB5100-B DO-201AD 500/Bulk SB5100-T DO-201AD 1.2K/Tape & Reel, 13-inch (Note 3)