SB540 SMC | Alldatasheet

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T e c h n i c a l D a t a Green Products Data Sheet N0066 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB540 SB540 SCHOTTKY RECTIFIER Applications: z Switching power supply z Converters z Free-Wheeling diodes z Reverse battery protection z Disk drives z Battery charging Features: z Small foot print, surface mountable z Very low forward Voltage Drop z High frequency operation z Guard ring for enhanced ruggedness and long term reliability z Green Products in Compliance the ROHS Directive z This is a Pb − Free Device z All SMC parts are traceable to the wafer lot z Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD

T e c h n i c a l D a t a Green Products Data Sheet N0066 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB540 Marking Diagram: Where XXXXX is YYWWL S B = D e v i c e T y p e 5 = F o r w a r d C u r r e n t ( 5 A ) 40 = Reverse Voltage (40V) S S G = S S G Y Y = Y e a r W W = W e e k L = L o t N u m b e r Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package Shipping SB540 DO-201AD (Pb-Free) 1250 pcs / Tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Symbol Condition Max. Units Peak Inverse Voltage V RWM - 40 V Max. Average Forward I F(AV) 50% duty cycle @T C =80°C, rectangular wave form 5 A Max. Peak Repetitive Forward Current IFRM At Rated VR, Square Wave,20KHZ,TC=80℃ 10 A Max. peak one cycle Non- repetitive Surge Current IFSM 8.3 ms, half Sine pulse 190 A

T e c h n i c a l D a t a Green Products Data Sheet N0066 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB540 Electrical Characteristics: Characteristics Symbol Condition Max. Units Max. Forward Voltage Drop* V F1 @ 5A, Pulse, TJ = 25 °C 0.65 V V F2 @ 5 A, Pulse, TJ = 125 °C 0.63 V Max. Reverse Current (per leg) * IR1 @V R = rated VR TJ = 25 °C 1.0 mA I R2 @V R = rated VR TJ = 125 °C 30 mA Max. Junction Capacitance (per leg) CT @VR = 5V, TC = 25 °C fSIG = 1MHz 200 pF Max. Voltage Rate of Change dv/dt - 10,000 V/us * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Max. Junction Temperature T J - -55 to +125 °C Max. Storage Temperature T stg - -55 to +125 °C Maximum Thermal Resistance Junction to Lead RθJL - 12 °C/W Maximum Thermal Resistance, Junction to Ambiebt RθJA - 111 °C/W Approximate Weight wt - 1.02 g Case Style DO-201AD

T e c h n i c a l D a t a Green Products Data Sheet N0066 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB540 100 1000 5 1 01 52 02 53 03 54 0 Reverse Voltage-VR(V) Junction Capacitance-CT(PF) 0.001 0.01 0.1 100 10 20 30 40 50 60 70 80 90 100 Reverse Voltage (%) Reverse Current (MA) 100 1000 0 5 10 15 20 25 30 35 40 R everse Voltage-VR (V) Junction Capacitance-CT(PF) 100 Forward Voltage Drop(V) Instantaneous Forward Current(A) Fig.2-Typical Reverse Characteristics Fig.3-Typical Instantaneous Forward Voltage Characteristics Fig.1-Typical Junction Capacitance TJ=125℃ TJ=25℃ TJ=125℃ TJ=25℃ TJ=25℃

T e c h n i c a l D a t a Green Products Data Sheet N0066 Rev. -

  • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • SB540 DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..