SB520 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o 5.0A
- VRRM 20V-100V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode SB5XX XX:From 20 to 100 DO-2 DO-27 Plastic-Encapsulate Diodes Schottky Rectifier SB520 THRU SB5100 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition SB5 20 30 40 50 60 80 100 Peak Forward Voltage V FM V I FM Peak Reverse Current I RRM1 mA V RM RRM Ta=25℃ 0.1 I RRM2 Ta=125℃ 10 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 25 R θJ-L Between junction and lead 8 Item Symbol Unit Conditions Repetitive Peak Reverse Voltage V RRM V Average Forward Current I F(AV) A 5.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave,1 cycle, Ta=25℃ 150 Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 20 30 40 50 60 80 100 20 30 40 50 60 80 100 SB5 V 14 21 28 35 42 56 70 Maximum RMS V RMS Vo ltage 60Hz Half-sine wave, Resistance ℃ load, Ta=75
H igh Diode Semiconductor IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 1.0 2.0 10 20 100 120 FIG.4: TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) Tj=25 Tj=125 Tj=75 0.001 0.01 0 20 40 60 80 100 0.1 1.0 100 100 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 1.0 2.0 3.0 4.0 5.0 SB520-SB560 SB580-SB5100
H igh Diode Semiconductor DO-2 Unit: in inches (millimeters) MIN 0.96(24.5) MIN 0.96(24.5)
H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers